Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes

Bluet, Jean‐Marie; Ziane, Dj.; Guillot, G.; Tournier, Dominique; Brosselard, Pierre; Montserrat, J.; Godignon, P.

doi:10.1016/j.spmi.2006.06.012

Cited by 16 publications

(9 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Values of ρ 2 = −0.238 and ρ 3 = −22.9 mV were obtained for Al_TC diodes, while values of ρ 2 = −0.0051 and ρ 3 = −1.34 mV were recorded for the case of C_TC diodes. The values obtained for ρ 2 and ρ 3 are of the same order of magnitude, particularly for the Al_TC diodes case, as those published previously in the literature [35][36][37].…”

Section: Resultssupporting

confidence: 85%

Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings: temperature and implant-dose dependence

Latreche

Ouennoughi

Sellai

et al. 2011

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The electrical characteristics of ion-implanted guard rings for molybdenum (Mo) Schottky diodes on 4H-SiC are analyzed on the basis of the standard thermionic emission model and the assumption of a Gaussian distribution of the barrier height. For edge termination, high-resistivity guard rings manufactured by carbon and aluminum ion-implanted areas were used. Extractions of barrier heights of molybdenum on silicon carbide (4H-SiC) Schottky diodes have been performed on structures with various gate metallization, using both current-voltage-temperature (I-V-T) and capacitance-voltage (C-V) measurements. Characteristic features of the Schottky barrier height (SBH) are considered in relation to the specific dose of the carbon-or aluminum-implanted guard ring. Contacts showed excellent Schottky behavior ideality factors between 1.02 and 1.24 in the range of 303-473 K. The measured SBHs were between 0.92 and 1.17 eV in the same temperature range from I-V-T characteristics. The variations in the barrier height, which is significantly temperature-and implantation-dose-dependent, are well fitted to a single Gaussian distribution function. Experimental results agree reasonably well by using this approach, particularly for carbon implantation dose of 1.75 × 10 14 cm −2 , and a mean barrier height ( ¯ B0 ) of 1.22 eV and zero bias standard deviation σ 0 = 0.067 V have been obtained. Furthermore, the modified Richardson plot according to the Gaussian distribution model resulted in a mean barrier height ( ¯ B0 ) and a Richardson constant (A * ) of 1.22 eV and 148 A cm −2 K −2 , respectively. The A * value obtained from this plot is in very close agreement with the theoretical value of 146 A cm −2 K −2 for n-type 4H-SiC. Therefore, it has been concluded that the temperature dependence of the forward (I-V) characteristics of the Mo/4H-SiC contacts can be successfully explained on the basis of a thermionic emission conduction mechanism with Guassianly distributed barriers.

show abstract

Section: Resultssupporting

confidence: 85%

Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings: temperature and implant-dose dependence

Latreche

Ouennoughi

Sellai

et al. 2011

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Below 200 K, we have observed a respective increase and decrease in the ideality factor and the barrier height. Similar trends have already been reported recently for contacts on other semiconductors and have been explained by assuming lateral inhomogeneities at the interface [25][26][27][28]. The temperature dependence of the ideality factor n(T ) has been frequently found to have the form of n(T ) = 1 + (T 0 /T ), where T 0 is constant, independent of temperature [29][30][31].…”

Section: -V -T Characteristicssupporting

confidence: 82%

Influence of He-ion irradiation on the characteristics of Pd/n-Si_0.90Ge_0.10/Si Schottky contacts

Mamor

Sellai²,

Bouziane

et al. 2007

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of He-ion irradiated Pd/n-Si09Ge0.10 Schottky contacts have been measured in the temperature range from 100 to 300 K. Schottky barrier properties such as the Schottky barrier height (Φbn) and ideality factor (n) have been studied as a function of temperature. The degree to which their characteristics deviated from the ideal case increased as the temperature decreased. A decrease in Φbn and an increase in n with decreasing temperature are observed. Additionally, linear dependence between the so-called temperature factor T0 and temperature as well as between Φbn and n are shown. This type of strong temperature dependence indicates the presence of a large degree of lateral inhomogeneities of the barrier height, resulting from the He-ion irradiation induced defects and traps which produce a variation in the number of free carriers. The presence of electrically active defects introduced by He-ion irradiation at and below the Si0.90Ge0.10 surface support this interpretation.

show abstract

“…[1][2][3][4][5][6] 그 중에서도 Schottky 다이오드는 대표적인 고전압 소자이며, 현재 300 V-1.2 kV, 1-20 A 급의 탄화규소 Schottky 다이오드가 상업화 되어 있다. 7) Schottky 다이오드 제작 공정 중 금속 접합 공정은 Ohmic 접합과 Schottky 접합으로 나눌 수 있으며, 여기서 J F 는 V F 에서의 전류 밀도이며, 보통 100 A/cm 2 의 값을 기준으로 하며, 본 연구에서도 이 수치를 적용 하였다. 12,13) 위의 방식에 의해 구해진 Schottky 장벽 높이는 0.67 참 고 문 헌 P on J = Fig.…”

Section: 서 론unclassified

Characteristics of Nickel_Titanium Dual-Metal Schottky Contacts Formed by Over-Etching of Field Oxide on Ni/4H-SiC Field Plate Schottky Diode and Improvement of Process

Oh¹,

Lee²,

Kim

et al. 2009

Korean. J. Mater. Res.

View full text Add to dashboard Cite

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. 10)본 연구에서는 Schottky 접합의 모서리에 집중되는 전 계를 완화시켜주기 위한 접합부 마무리(edge termination)

show abstract

Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes

Cited by 16 publications

References 4 publications

Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings: temperature and implant-dose dependence

Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings: temperature and implant-dose dependence

Influence of He-ion irradiation on the characteristics of Pd/n-Si_0.90Ge_0.10/Si Schottky contacts

Characteristics of Nickel_Titanium Dual-Metal Schottky Contacts Formed by Over-Etching of Field Oxide on Ni/4H-SiC Field Plate Schottky Diode and Improvement of Process

Contact Info

Product

Resources

About

Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes

Cited by 16 publications

References 4 publications

Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings: temperature and implant-dose dependence

Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings: temperature and implant-dose dependence

Influence of He-ion irradiation on the characteristics of Pd/n-Si0.90Ge0.10/Si Schottky contacts

Characteristics of Nickel_Titanium Dual-Metal Schottky Contacts Formed by Over-Etching of Field Oxide on Ni/4H-SiC Field Plate Schottky Diode and Improvement of Process

Contact Info

Product

Resources

About

Influence of He-ion irradiation on the characteristics of Pd/n-Si_0.90Ge_0.10/Si Schottky contacts