Barrier Height Modification of n-InP Using a Silver Nanoparticles Loaded Graphene Oxide as an Interlayer in a Wide Temperature Range

Baltakesmez, Ali; Taşer, Ahmet; Kudaş, Züleyha; Güzeldir, B.; Ekinci, Duygu; Sağlam, M.

doi:10.1007/s11664-019-07088-8

Cited by 17 publications

(5 citation statements)

References 31 publications

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“…The linear and semi-log I-V characteristics of a selected Ag/FLG/n-InP Schottky diode are shown in Figure 2. The FLG/n-InP structure showed good rectification properties and the rectifier feature of the diodes is in good agreement with the previously reported results (Baltakesmez et al, 2019), (Çetin & Ayyildiz, 2010), , (Bhaskar Reddy et al, 2009), (Cimilli et al, 2009b). The nonlinear I-V characteristic of Schottky diode behavior can be explained by thermionic emission theory (Bhaskar Reddy et al, 2009), (Gülnahar M, 2015).…”

Section: Resultssupporting

confidence: 90%

Electronic Properties of FLG/InP Schottky Contacts

Çatır

Gülnahar

2023

EJOSAT

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Graphene (Gr) is of great interest in the development of new electronic, photonic, and composite materials. The physical properties of Gr can vary depending on the number of layers, and this unique property makes it a potential material for different electronic applications. In this study, few-layer graphene (FLG) film was spin-coated onto the InP semiconductor surface and the FLG/n-InP Schottky contact was produced. The properties and quality of the FLG nano-film were determined by using Raman spectroscopy. Parameters such as ideality factor, barrier height, and series resistance of Schottky contacts were calculated using current-voltage (I-V) curves. With the Gaussian distribution, the mean ideality factor of the Gr/InP contacts was found to be =1,47, and the mean barrier height values were found to be =0.68 eV. The standard deviation values were calculated as σ=0.32 for the ideality factor and σ=0.06 eV for the barrier height. In addition, the series resistance values were calculated from the Cheung functions and were found to be in agreement with the literature. Finally, the current conduction mechanisms of the Gr/n-InP structure were revealed by examining the logarithmic I-V characteristics.

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Section: Resultssupporting

confidence: 90%

Electronic Properties of FLG/InP Schottky Contacts

Çatır

Gülnahar

2023

EJOSAT

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“…Figure 4a shows the forward and reverse bias semilogarithmic I–V characteristics of the Ti/GO/n‐InP SB diode and Ti/n‐InP reference diode. As shown in Figure 4a, the log I–V characteristics clearly show the effect of GO film at room temperature and the leakage current decreases significantly, [ 22 ] whereas the rectification performance is significantly improved. This decrease in leakage current value can be attributed to the increase in BH.…”

Section: Resultsmentioning

confidence: 99%

“…That is, the BH can be controlled and it is a very important advantage for the MS junctions. [ 22 ] Figure 4a,b also shows the nonlinear region of the I–V curves at high forward bias due to the effect of the series resistance and the interface state density at the MS interface.…”

Section: Resultsmentioning

confidence: 99%

The Structural, Optical, and Electrical Characterization of Ti/n‐InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method

Çatır

2020

Physica Status Solidi (a)

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Ti/GO/n-InP Schottky barrier diode (SBD) is obtained by growing graphene oxide (GO) film on n/InP semiconductor using easy and economical spray pyrolysis method. The effect of GO as the interfacial layer on device performance of Ti/GO/n-InP SBD is investigated in detail. The optical absorbance spectra show that bandgap energy of the GO film is 3.57 eV. The optical transmittance value of 79.5% is in consistent with the absorbance spectra of GO film. The barrier heights (BHs) that are estimated for the Ti/GO/n-InP SBD vary from 0.263 to 0.980 eV (I-V) and 1.328 to 1.006 eV (C-V) from the I-V and C-V measurements in the temperature range of 100-400 K. The contradiction between the BHs from the I-V and C-V characteristics is discussed. The mean BH values are found to be Φ b01 ¼ 0.98 eV (250-400 K) and Φ b02 ¼ 0.73 eV (100-250 K) from the Φ b0-1/2kT plot. From the modified Richardson plots based on a Gaussian distribution of BH, Φ b01 ¼ 0.93 (250-400 K) and Φ b02 ¼ 0.69 eV (100-250 K) and A* is calculated to be 12.44 and 12.73 A cm À2 K À2 , respectively. The I-V-T and C-V-T measurements demonstrate that carrier transport mechanism of Ti/GO/n-InP is well explained by thermionic emission (TE) mechanism with a double Gaussian distribution of the Schottky barrier heights (SBHs).

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“…The search for alternative materials to silicon, which is the basic material of electronics, which develops in parallel with information and technological developments, has focused attention on organic semiconductor materials. [4][5][6][7] Schottk contacts has widespread use in various fields such as photovoltaics, batteries, sensors, supercapacitors and transistors, making it a popular research topic for synthetic researchers. Schottky diode is an optoelectronic device that can be fabricated using any semiconductor material that exhibits a rectifying nature at the MS junction.…”

Section: Introductionmentioning

confidence: 99%

“…Organic semiconductor materials are considered as the material of the future. The search for alternative materials to silicon, which is the basic material of electronics, which develops in parallel with information and technological developments, has focused attention on organic semiconductor materials [4–7] . Schottk contacts has widespread use in various fields such as photovoltaics, batteries, sensors, supercapacitors and transistors, making it a popular research topic for synthetic researchers.…”

Section: Introductionmentioning

confidence: 99%

Investigation Of The Schottky Diode Performance of a new Diaminomaleonitrile‐Based Organic Material with D‐Π‐A Architecture

Erdoğan,

Rıza Deniz,

Çaldıran

et al. 2024

ChemistrySelect

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In this paper, firstly, a new organic material 9 containing triphenylamine (TPA) unit as an electron donor and diaminomaleonitrile (DAMN) unit as an electron acceptor and thiophene scaffold as a π‐linker bridge was designed for diode applications according to D‐π‐A architecture. The organic material 9 was synthesized in four reaction steps with excellent yield (94 %), and fully characterized by 1H NMR, 13C NMR, FTIR, and HRMS spectra. The diode performance properties of the obtained organic material were examined in detail. Current‐voltage (I–V) and capacitance‐voltage (C–V) measurements of this diode were carried out. As a result of the analysis of these measurements, the effect of the organic material used as the interface material on the electrical properties of the diode was analyzed.

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Barrier Height Modification of n-InP Using a Silver Nanoparticles Loaded Graphene Oxide as an Interlayer in a Wide Temperature Range

Cited by 17 publications

References 31 publications

Electronic Properties of FLG/InP Schottky Contacts

Electronic Properties of FLG/InP Schottky Contacts

The Structural, Optical, and Electrical Characterization of Ti/n‐InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method

Investigation Of The Schottky Diode Performance of a new Diaminomaleonitrile‐Based Organic Material with D‐Π‐A Architecture

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