Barrier heights and Fermi level pinning in metal contacts on p-type GaN

Wahid, Sumaiya; Chowdhury, Nadim; Alam, Md. Kawsar; Palacios, Tomás

doi:10.1063/5.0010699

Cited by 20 publications

(7 citation statements)

References 40 publications

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“…According to Ref. [26], both Mo and W yield Schottky barrier heights in the range of 0.7 eV when deposited on a p-GaN surface. To experimentally study the Schottky characteristics (in terms of Schottky turnon voltages and leakage currents) of these metals on p ++ -GaN surface (which serves as the top layer of the epitaxial structure used in this work), W and Mo contacts were deposited on p ++ -GaN and current-voltage characteristics of the gate electrodes were measured as shown in Fig.…”

Section: Epitaxial Structure and Device Fabricationmentioning

confidence: 96%

Tungsten-Gated GaN/AlGaN p-FET With I_max > 120 mA/mm on GaN-on-Si

Chowdhury

Xie

Palacios

2022

IEEE Electron Device Lett.

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Section: Epitaxial Structure and Device Fabricationmentioning

confidence: 96%

Tungsten-Gated GaN/AlGaN p-FET With I_max > 120 mA/mm on GaN-on-Si

Chowdhury

Xie

Palacios

2022

IEEE Electron Device Lett.

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“…4(b). Wahid et al, 40) Su et al, 43) and Puneetha et al 45) also used this method to obtain the barrier height for ohmic contacts to p-GaN. The saturation current density ranges from 5.26 mA at 298 K to 6.92 mA at 400 K. The weak temperature dependence of saturation current density is another indicator that the tunneling current is the main transport mechanism for T141 sample.…”

Section: Resultsmentioning

confidence: 99%

Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates

2023

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We grew ZnO films at different temperatures on glass substrates using thermal atomic layer deposition and investigated the current conduction mechanism of Pt/ZnO junctions. For ZnO samples grown at 46 and 96°C, the current flow through the ZnO layer was not possible at low temperatures such as 298 and 320 K because the ZnO layer under Schottky contacts were wholly depleted. However, the current conduction was observed with increasing the temperature, which was found to be dominated by the Schottky emission at 360 and 380 K and the PooleFrenkel emission at 380 and 400 K. For ZnO sample grown at 141°C, the strong tunneling current could occur because very thin depletion region was formed because of the high carrier concentration of ZnO layer. The observed difference in the current conduction can provide a guidance how growth temperature of ZnO should be controlled to design the low-temperature grown ZnO based devices built on glass substrates.

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“…Нанесення металевої плівки на поверхню напівпровідників активно використовують для створення омічних контактів у приладах сучасної електроніки й оптоелектроніки зокрема. Нині основними методами нанесення контактної сітки є методи термічного випаровування, іонного розпилення та хімічного осадження з газової фази (парогазової суміші) [1][2][3].…”

Section: вступunclassified

“…Якщо через два найближчі контакти (рис. 4) пропускати струм, то повний опір складається з двох компонентів [3,13]: Довжина перенесеннявідстань, на яку переноситься струм від краю вглиб контакту. Якщо вважати, що R sk = R sh і L T = L x / 2 (де L x -довжина відрізку, яку лінія тренду відсікає на осі довжин), то питомий контактний опір станови-тиме: 7,2 • 10 -4 Ом • см 2 .…”

Section: дослідження зразків й обговоренняunclassified

DEPOSITION OF Al/SnAl OHMIC CONTACT ON SILICON FROM A LIQUID PHASE

Tsybulenko¹,

Shutov²,

Boskin³

2021

KPI SN

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Background. Single- and multi-layer metal films are widely utilized in modern electronics and optoelectronics as ohmic contacts. As a rule, the films are deposited by thermal evaporation, ion sputtering and chemical vapour deposition. However the methods of deposition from a liquid phase are the most simple and cost-effective. Thus the ohmic contact deposition by these methods is still an actual problem. Objective. The purpose of the paper is to study the possibility of deposition of multi-layer ohmic metal films over a semiconductor wafer surface from a liquid phase, particularly by scanning liquid phase epitaxy technique. Methods. In this work we considered the influence of a long-term temperature gradient at the interface metallic solution-melt – semiconductor wafer on the possibility of deposition of multi-layer ohmic metal films on the semiconductor wafer surface during segmental contact between the solution-melt and the wafer. For this purpose we carried out the simulation of heat transport process, wafer wetting process as well as the process of wafer cleansing off the solution-melt taking into account capillary phenomena in the mask openings using the method of scanning liquid phase epitaxy. For experimental confirmation of adequacy of the model proposed we carried out the deposition of Al/SnAl layer on silicon wafer in the above mentioned conditions. Results. We have deposited the contact layer Al/SnAl on the surface of silicon wafer from Al-Sn solution-melt by scanning liquid phase epitaxy technique using supplementary heater for the wafer and mask installed in the apparatus. The contact layer is made as three identical pads located at different distance one from each other. By the analysis of current-voltage characteristic we determined that the metallic film contact with the semiconductor is a non-rectifying, i.e. ohmic contact. The specific contact resistance was determined by the Transmission Line Method using linear configuration of the contact pads (LTLM). Its value was 7.2∙10-4 Ohm·cm2. Conclusions. The principal possibility of obtaining of multi-layer ohmic contacts to the semiconductor by scanning liquid phase epitaxy technique in conditions of segmental contact between the solution-melt and the wafer as well as long-term gradient at the contact interface was shown. The conditions were realized by using extra heating of the wafer back side and the high-temperature mask through which the solution-melt contacted the wafer.

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Barrier heights and Fermi level pinning in metal contacts on p-type GaN

Cited by 20 publications

References 40 publications

Tungsten-Gated GaN/AlGaN p-FET With I_max > 120 mA/mm on GaN-on-Si

Tungsten-Gated GaN/AlGaN p-FET With I_max > 120 mA/mm on GaN-on-Si

Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates

DEPOSITION OF Al/SnAl OHMIC CONTACT ON SILICON FROM A LIQUID PHASE

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Barrier heights and Fermi level pinning in metal contacts on p-type GaN

Cited by 20 publications

References 40 publications

Tungsten-Gated GaN/AlGaN p-FET With Imax > 120 mA/mm on GaN-on-Si

Tungsten-Gated GaN/AlGaN p-FET With Imax > 120 mA/mm on GaN-on-Si

Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates

DEPOSITION OF Al/SnAl OHMIC CONTACT ON SILICON FROM A LIQUID PHASE

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Tungsten-Gated GaN/AlGaN p-FET With I_max > 120 mA/mm on GaN-on-Si

Tungsten-Gated GaN/AlGaN p-FET With I_max > 120 mA/mm on GaN-on-Si