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In this work, we investigate the current–voltage (I–V) characteristics of various metal contacts such as Ni/Au, Ir/Au, Ru/Au, Mo/Au, and W/Au on p-GaN. For this, we fabricated different bilayer metal contacts on the same epitaxial heterostructure of GaN, which ensures the uniformity of the experimental data. I–V measurements were then carried out for circular and/or linear contact pads with different spacing values. In each case, the Schottky barrier height of the metal contacts is calculated using the reverse I–V method. A strong Fermi level pinning was found in all these structures on p-GaN, with a pinning factor of ∼0.15. In addition, a very low Ohmic contact resistivity of 3.45 × 10−6 Ω cm2 was measured for the Ru/Au contacts on p-GaN.

In this paper, we present a detailed performance analysis of monolithically integrated dual junction silicon‐based tandem solar cells with perovskite as the top cell material, using physics‐based model. The perovskite cell is modeled based on four different configurations, namely p–i–n, p–p–n, n–i–p, and n–p–p whereas standard models are considered for the silicon cell. We explore the sensitivity of the tandem cell performance by varying the transport layer properties, namely the minority carrier surface recombination velocities. We also investigate the effect of varying the sub‐cell thicknesses on the tandem efficiency. The results illustrate the superior effect of top cell parameters, both surface recombination velocity and thickness, in improving the cell performance. We also demonstrate a range of optimum thickness for the top sub‐cell while examining the co‐dependence between the absorber layer thickness and minority carrier surface recombination velocities. In closing, we study the effect of series and shunt resistances on the overall tandem cell efficiency.

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