Barrier inhomogeneities at Schottky contacts

Werner, Jürgen; Güttler, H.

doi:10.1063/1.347243

Cited by 1,498 publications

(1,156 citation statements)

References 39 publications

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“…Figure 1h shows the temperature-dependent values of the diode derived from the J-V characteristics. The Richardson plot suggests that the current transport is governed by thermionic emission since the diffusion transport is less sensitive to temperature 37 . The large deviation at low temperatures can be explained by the barrier height fluctuation model, that is, the barrier height follows a Gaussian distribution, j eff ¼ j m -qs 2 /(2k B T), where j eff is the effective barrier height, j m is the mean barrier height and s is the s.d.…”

Section: Resultsmentioning

confidence: 99%

“…The large deviation at low temperatures can be explained by the barrier height fluctuation model, that is, the barrier height follows a Gaussian distribution, j eff ¼ j m -qs 2 /(2k B T), where j eff is the effective barrier height, j m is the mean barrier height and s is the s.d. 37 . It is found that for the diode with an IGZO thickness of 80 nm and a diameter of 1 mm, the mean barrier height is 1.40 eV with a s.d.…”

Section: Resultsmentioning

confidence: 99%

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Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

et al. 2015

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Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

et al. 2015

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“…[181] Inhomogeneities in MIS interfaces can easily dominate net transport across them. [151,152] This is found even at the nanoscopic level. Thus, the conductance of isolated styrene [27] or acetone [182] molecules, adsorbed on Si, is affected strongly by the chemical conditions of neighboring Si atoms, which act as gate for transport across the adsorbed molecules.…”

Section: Imperfections In the Monolayermentioning

confidence: 92%

“…[44,63,90,150] SBH(J 0 ) < SBH(C 0 ) suggests an inhomogeneous barrier. [151,152] Surprisingly, for Hg/alkyl-n-Si MOMS SBH(J 0 ) $SBH(C 0 )) [19,135] but this is simply because both the width of the space charge (C 0 ) and the semiconductor transport (J 0 ) saturate at similar values (strong inversion). In any case, SBH > E G /2 presents strong support for inversion.…”

Section: Extraction Of the ''Semiconductor Barrier Height'' (Sbh)mentioning

confidence: 99%

Molecules on Si: Electronics with Chemistry

et al. 2009

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Basic scientific interest in using a semiconducting electrode in molecule‐based electronics arises from the rich electrostatic landscape presented by semiconductor interfaces. Technological interest rests on the promise that combining existing semiconductor (primarily Si) electronics with (mostly organic) molecules will result in a whole that is larger than the sum of its parts. Such a hybrid approach appears presently particularly relevant for sensors and photovoltaics. Semiconductors, especially Si, present an important experimental test‐bed for assessing electronic transport behavior of molecules, because they allow varying the critical interface energetics without, to a first approximation, altering the interfacial chemistry. To investigate semiconductor‐molecule electronics we need reproducible, high‐yield preparations of samples that allow reliable and reproducible data collection. Only in that way can we explore how the molecule/electrode interfaces affect or even dictate charge transport, which may then provide a basis for models with predictive power.To consider these issues and questions we will, in this Progress Report, review junctions based on direct bonding of molecules to oxide‐free Si. describe the possible charge transport mechanisms across such interfaces and evaluate in how far they can be quantified. investigate to what extent imperfections in the monolayer are important for transport across the monolayer. revisit the concept of energy levels in such hybrid systems.

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“…barrier height determined from zero bias intercept assuming thermionic emission as current transport mechanism is well below the measured BH and the weighted arithmetic average of the barrier heights [18,19]. Furthermore, the surface damage at the metal-semiconductor interface affects the I-V measurements because defects may act as recombination centers for trapassisted tunneling currents.…”

Section: Diale Fd Auret / Physica B ] (]]]]) ]]]-]]]mentioning

confidence: 99%

Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes

Diale

Auret

2009

Physica B: Condensed Matter

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a b s t r a c tWe have studied Au/n-GaN Schottky barrier diodes. GaN surfaces have been prepared by cleaning in HCl and (NH 4 ) 2 S prior to metal deposition. The zero-biased barrier heights and ideality factors obtained from the current-voltage characteristics differ from diode to diode, although all the samples were prepared identically. The statistical analysis for the reverse bias C-V data yielded mean value of (1.357 0.04) eV for Schottky barrier height of HCl treated sample and (1.20 7 0.03) eV for (NH 4 ) 2 S sample, where 9 dots were considered from each cleaning method. It was found that the barrier height values obtained from the C À 2 -V (1.43 eV) and I-V characteristics (0.89 eV) are different from each other by 0.54 eV. The inhomogeneous barrier heights were found to be related to the effect of the high series resistance on diode parameters [1].

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Barrier inhomogeneities at Schottky contacts

Cited by 1,498 publications

References 39 publications

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

Molecules on Si: Electronics with Chemistry

Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes

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