Barrier inhomogeneity and leakage current transport mechanism in vertical Pt/Gd2O3/GaN Schottky diodes

Kim, Hogyoung; Lee, Ha Young; Choi, Byung Joon

doi:10.1007/s00339-021-04799-w

Cited by 7 publications

(1 citation statement)

References 42 publications

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“…By considering these factors, we modified the q f -B C V values. In this case, the C-V characteristics are modified as follows [45,46]:…”

Section: S S Ementioning

confidence: 99%

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers

Kim¹,

Jung²,

Choi³

2022

Phys. Scr.

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In this study, ZnO (10 nm) and TiO2 (2 nm) were grown on a GaN substrate via atomic layer deposition, and the modified properties of Pt/GaN Schottky diodes with ZnO and ZnO/TiO2 interlayers (ILs) were electrically investigated. The barrier height increased with the ZnO and ZnO/TiO2 ILs; however, the ideality increased with the ZnO/TiO2 IL. The reverse-current–voltage characteristics were associated with the Poole–Frenkel emission for all the three junctions. Compared with the Pt/GaN junction, the density of the surface states decreased for the Pt/ZnO/GaN junction but increased for the Pt/ZnO/TiO2/GaN junction. An increase in the ideality factor and a decrease in the barrier height with decreasing temperature were observed at the Pt/GaN and Pt/ZnO/TiO2/GaN junctions. In general, the diode characteristics of the Pt/GaN junction improved owing to the ZnO IL, whereas it degraded owing to the ZnO/TiO2 IL. However, both ZnO and ZnO/TiO2 ILs demonstrate worse diode characteristics at higher temperatures. A thicker ZnO layer (> 10 nm) is suggested for improved thermal stability.

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“…By considering these factors, we modified the q f -B C V values. In this case, the C-V characteristics are modified as follows [45,46]:…”

Section: S S Ementioning

confidence: 99%

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers

Kim¹,

Jung²,

Choi³

2022

Phys. Scr.

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Temperature-dependent current–voltage characteristics of p-GaSe0.75S0.25/n-Si heterojunction

2023

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Vertical Schottky Contacts to Bulk GaN Single Crystals and Current Transport Mechanisms: A Review

Kim

2021

J. Electron. Mater.

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Barrier inhomogeneity and leakage current transport mechanism in vertical Pt/Gd2O3/GaN Schottky diodes

Cited by 7 publications

References 42 publications

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers

Temperature-dependent current–voltage characteristics of p-GaSe0.75S0.25/n-Si heterojunction

Vertical Schottky Contacts to Bulk GaN Single Crystals and Current Transport Mechanisms: A Review

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Barrier inhomogeneity and leakage current transport mechanism in vertical Pt/Gd2O3/GaN Schottky diodes

Cited by 7 publications

References 42 publications

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO2/ZnO interlayers

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO2/ZnO interlayers

Temperature-dependent current–voltage characteristics of p-GaSe0.75S0.25/n-Si heterojunction

Vertical Schottky Contacts to Bulk GaN Single Crystals and Current Transport Mechanisms: A Review

Contact Info

Product

Resources

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Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers