Vertical Schottky Contacts to Bulk GaN Single Crystals and Current Transport Mechanisms: A Review

Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

“…A possible explanation is the occurrence of different current transport mechanisms, which coexist with TFE. A similar conclusion has been reported in literature to model the electrical behaviour of Schottky diodes on GaN bulk in forward and reverse configuration [14,31].…”

Comparative study of epitaxial growth and Ni/GaN Schottky device on patterned sapphire substrates

“…Based on the TE model, the positive I – V relationship of SBD is given as the following formula. 7 where J , A *, T , q , Φ B , k , V and n are saturation current density, Richardson's constant, absolute temperature, electron charge, barrier height, Boltzmann's constant, forward bias voltage, and ideality factor, respectively. In Fig.…”

“…These applications are attributed to their outstanding properties, such as wide bandgap (3.4 eV), high electron mobility (1000 cm 2 V −1 s −1 ) and high breakdown electric field (∼3.0 MV cm −1 ). [1][2][3][4][5][6] Although significant progress has been achieved in GaN SBD devices, 7,8 material epitaxial stress and dislocation, metal contact, and surface-related issues still need immediate solutions. [9][10][11] For instance, screw or mixed dislocation increases dark current for ultraviolet photodetectors, 12 which greatly influences the electrical characteristics of the device.…”

“…Some studies have focused on the mechanism and model of reverse current characteristics for GaN Schottky diodes. 7,13 Defect-related conduction across the metal/GaN interface, 14 in particular dislocations, might play an important role in reverse bias leakage. To reduce the threading dislocation density in devices, some research groups are exploring molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD) growth of GaN on GaN templates.…”

Investigation into the impact of bulk defects in the drift layer on the electrical properties of GaN-based trench Schottky barrier diodes

“…[1][2][3] Recently, GaN has received significant attention due to its excellent material properties such as a large critical electric field and high electron mobility, which can enable power devices to become much smaller with an even higher power conversion efficiency. [4][5][6] Hence, GaN-based power devices have great potential for use in electric vehicles, data centers, AC/DC motors and power grids. [7][8][9] To meet these requirements, different types of GaN-based power devices have been proposed and fabricated, such as high-electron-mobility transistors, 10) PIN diodes 11) and Schottky barrier diodes (SBDs).…”