Barrier layer induced channeling effect of As ion implantation in HgCdTe and its influences on electrical properties of p–n junctions

Shi, Changzhi; Lin, Chun; Wei, Yanfeng; Chen, Lu; Zhu, Meiling

doi:10.1364/ao.55.00d101

Cited by 15 publications

(11 citation statements)

References 10 publications

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“…The barrier layer is deposited to protect the MCT epilayer from the external contamination and absorb the induced damages. However, the thin evaporated CdTe barrier layer was proved to generate the BLICE effect [13]. This effect can be suppressed by increasing the thickness of evaporated CdTe layer and adopting the other barrier layer materials [12].…”

Section: Ion Beam Applicationsmentioning

confidence: 99%

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Characterization and Simulation of p-Type Ion Implantation in MCT

Shi¹

2018

Ion Beam Applications

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Ion implantation is one of the key technologies for the fabrication of HgCdTe (MCT) infrared photodiodes. In order to achieve p-on-n type photodiode structure with better performance, the group V elements typically serve as p-type dopants, especially arsenic. In this chapter, ion profiles, defect microstructures, and surface amorphization of implanted group V dopants represented by arsenic into MCT epilayers were characterized by secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM), and X-ray diffraction (XRD), respectively. The influences of some significant technological parameters related to ion implantation, such as implant energy, implant dose, ion beam current, barrier layer structure, on the distributions of ions and induced damages are analyzed. In addition, the high-temperature annealing used to eliminate induced damages and activate the electrical activity of ions was subjected to the as-implanted samples, and the ion diffusion profiles and surface microstructures were acquired and analyzed. Finally, the computer simulations on the collision of incident ions and lattice atoms were carried out to study the distributions of ions and recoil atoms numerically. The simulation results are in good agreement with the experimental data.

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Section: Ion Beam Applicationsmentioning

confidence: 99%

“…Some studies on arsenic ion implantation in MCT have been reported in several literature studies [4,8,11] and our previous work [12][13][14]. Classically, SIMS is used to acquire the distribution profiles of implanted ions, while the microstructures and distributions of induced damages are observed by TEM.…”

Section: Introductionmentioning

confidence: 99%

Characterization and Simulation of p-Type Ion Implantation in MCT

Shi¹

2018

Ion Beam Applications

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“…Development of the photodiode technology based on ion implantation requires microstructural studies of the implanted material, and arsenic-implanted MCT is not an exception (Mollard et al 2011;Lobre et al 2014;Shi et al 2016;Bonchyk et al 2020). These studies allow for assessing the type and the density of implantation-induced structural defects, which play a key role in controlling the electrical properties of the as-implanted MCT (Lobre et al 2014;Shi et al 2016). Electrical studies, in their turn, allow for assessing the degree of activation of the implanted ions and for obtaining the information on the transport properties of the material.…”

Section: Introductionmentioning

confidence: 99%

Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films

et al. 2021

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Bright-field and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 10 14 cm -2 fluence in n and p-type Hg 0.78 Cd 0.22 Te films grown by molecular-beam epitaxy. A similarity in defect pattern formed by arsenic implantation in n and p-type material was observed. The electrical properties of the implanted layers in n and p-type films also appeared to be similar, confirming the results of microscopic observations.

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“…Thus, the formation of graded-gap CdTe layer on MCT epilayer is significant for the acquisition of high-quality surface passivation. In our previous work [7,8], the influences of CdTe and ZnS cap layer microstructures on the implanted ion distributions and diffusions in MCT epilayers were studied. Here, the research work is focused on the CdTe/MCT structures, which is prepared by depositing CdTe cap layers onto MCT substrates by magnetron sputtering and thermal evaporation.…”

Section: Introductionmentioning

confidence: 99%

Diffusion of Dopants and Components in Arsenic-Implanted CdTe/HgCdTe Structures under Different High-Temperature Annealing Conditions

Shi¹,

Lin²,

Wei³

2019

The 15th International Workshop on Advanced Infrared Technology and Applications

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The CdTe cap layers were grown on CdZnTe-substrated HgCdTe (MCT) LPE epilayers by magnetron sputtering and thermal evaporation. The diffusion behaviors of Cd & Hg components and impurities (As or In) in these CdTe/MCT structures subjected to As ion implantation and various Hg overpressure annealing processes were investigated. The conclusions indicate that the defects at the CdTe/MCT interface could produce the accumulations of impurities and the distributions of induced damages (related to the cap layer structure) have a significant influence on the diffusion of components and impurities. By adjusting annealing procedures, the diffusions of components and impurities can be controlled.

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Barrier layer induced channeling effect of As ion implantation in HgCdTe and its influences on electrical properties of p–n junctions

Cited by 15 publications

References 10 publications

Characterization and Simulation of p-Type Ion Implantation in MCT

Characterization and Simulation of p-Type Ion Implantation in MCT

Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films

Diffusion of Dopants and Components in Arsenic-Implanted CdTe/HgCdTe Structures under Different High-Temperature Annealing Conditions

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