Barrier Selection Rules for Quantum Dots-in-a-Well Infrared Photodetector

Barve, Ajit V.; Sengupta, Sourav; Kim, Jun Oh; Montoya, John; Klein, Brianna; Shirazi, Mohammad Amin Cheraghi; Zamiri, Marziyeh; Sharma, Yashika; Adhikary, Sourav; Godoy, Sebastián; Jang, Woo‐Yong; Fiorante, Glauco Rogerio Cugler; Chakrabarti, Subhananda; Krishna, S.

doi:10.1109/jqe.2012.2208621

Cited by 11 publications

(9 citation statements)

References 21 publications

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“…The effect of growth speed proved to be most important with the quantum dot layer, as the lower growth speed allows for greater uniformity of quantum dot size, which in turn leads to better performance at the desired absorption wavelength. Similarly, higher quantum dot densities were also associated with stronger response, but were much easier to achieve with slower deposition speeds [8,82,239,240]. …”

Section: Quantum Dots-in-a-well Photodetectors (Dwell-ips)mentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

230

110

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The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

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Section: Quantum Dots-in-a-well Photodetectors (Dwell-ips)mentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

230

110

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“… The simulated and the measured absorption spectrum of the QD system. The quantum dot is sample D from [ 11 ], which is a dome-shaped QD with a base diameter of 20 nm and height of 5 nm. The doping is 1–2 electrons per dot, which is assumed to be 1.5 here.…”

Section: Resultsmentioning

confidence: 99%

“…The effect of mole fraction has been studied on a slightly different system, reported in [ 9 ], which helps us further validate the results of the simulations. The system reported in [ 9 ] is almost the same as in [ 11 ] except for two differences: (i) it is not doped and, (ii) it uses GaAs instead of AlGaAs. Fig.…”

Section: Resultsmentioning

confidence: 99%

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Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

Ameen

Ilatikhameneh

Tankasala

et al. 2018

Beilstein J. Nanotechnol.

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A detailed theoretical study of the optical absorption in doped self-assembled quantum dots is presented. A rigorous atomistic strain model as well as a sophisticated 20-band tight-binding model are used to ensure accurate prediction of the single particle states in these devices. We also show that for doped quantum dots, many-particle configuration interaction is also critical to accurately capture the optical transitions of the system. The sophisticated models presented in this work reproduce the experimental results for both undoped and doped quantum dot systems. The effects of alloy mole fraction of the strain controlling layer and quantum dot dimensions are discussed. Increasing the mole fraction of the strain controlling layer leads to a lower energy gap and a larger absorption wavelength. Surprisingly, the absorption wavelength is highly sensitive to the changes in the diameter, but almost insensitive to the changes in dot height. This behavior is explained by a detailed sensitivity analysis of different factors affecting the optical transition energy.

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“…Later on QDIPs with QW active regions, known as DWELL structures, were proposed to improve the detection wavelength tunability with InGaAs strain relief layers [79,80]. Surprisingly, DWELL IRPDs turned out to have advantages such as enhancement of absorption, low dark current, and high responsivity [81][82][83]. DWELL IRPDs have been extensively explored by Krishna's research group, and some of the main achievements are presented in their review articles [84].…”

Section: Qdip Based On Iii-v Materialsmentioning

confidence: 99%

Emerging technologies for high performance infrared detectors

2017

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Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional lowdimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced lightmatter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

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Barrier Selection Rules for Quantum Dots-in-a-Well Infrared Photodetector

Cited by 11 publications

References 21 publications

Progress in Infrared Photodetectors Since 2000

Progress in Infrared Photodetectors Since 2000

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

Emerging technologies for high performance infrared detectors

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