The compound BaBiTe3 was prepared by the reaction of
Ba/Bi/Te at over 700 °C in either K2Te4
or
BaTe3 flux and was recrystallized in a Ba/BaTe3
flux. The black rod-shaped polycrystalline material crystallizes
in
the orthorhombic space group
P212121 (no. 19) with
a = 4.6077(2) Å, b = 17.0437(8)
Å, c = 18.2997(8) Å, V =
1437.1(2) Å3, Z = 8, and
d
calc = 6.74 g/cm3. Number
with F
o
2 >
3σ(Fo)2 3373, number of variables 92,
and sin
(θ/λ) < 0.7. The final R/R
w
= 4.55/5.61%. The structure is BaBiSe3 type and may
be described as layers made up
from interdigitating columnar
[Bi4Te10(Te2)]∞
“herring-bone” shaped segments. Ba2+ ions are in
distorted tri-capped
trigonal prismatic sites between the layers. From band structure
calculations, a formal charge distribution taking
into account the occurrence of short-bonding Te···Te
contacts in the structure can be written as
Ba2+
4Bi3+
4Te2-
8Te1-
4.
The electrical conductivity, thermopower, thermal lattice
conductivity, and infrared absorption properties of this
material suggest that it is a narrow gap semiconductor. These
results are discussed in the context of the band scheme.