BaSi2 and thin film alkaline earth silicides on silicon

McKee, R. A.; Walker, Frederick J.; Conner, J.; Raj, Rishi

doi:10.1063/1.110297

Cited by 123 publications

(91 citation statements)

References 8 publications

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“…The conditions employed were suitable for the growth of BaSi 2 epitaxial films on a Si(111) surface. Although a-axis oriented BaSi 2 epitaxial films can be grown on both Si(111) and Si(001), 47,48 the optimum growth temperatures for these processes are different.…”

Section: Methodsmentioning

confidence: 99%

Potential variation around grain boundaries in BaSi2 films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy

Baba

Hara

Tsukahara

et al. 2014

Journal of Applied Physics

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Investigations on residual strains and the cathodoluminescence and electron beam induced current signal of grain boundaries in silicon J. Appl. Phys. 115, 163511 (2014) Potential variations across the grain boundaries (GBs) in a 100 nm thick undoped n-BaSi 2 film on a cast-grown multicrystalline Si (mc-Si) substrate are evaluated using Kelvin probe force microscopy (KFM). The h-2h X-ray diffraction pattern reveals diffraction peaks, such as (201), (301), (410), and (411) of BaSi 2 . Local-area electron backscatter diffraction reveals that the a-axis of BaSi 2 is tilted slightly from the surface normal, depending on the local crystal plane of the mc-Si. KFM measurements show that the potentials are not significantly disordered in the grown BaSi 2 , even around the GBs of mc-Si. The potentials are higher at GBs of BaSi 2 around Si GBs that are formed by grains with a Si(111) face and those with faces that deviate slightly from Si(111). Thus, downward band bending occurs at these BaSi 2 GBs. Minority carriers (holes) undergo a repelling force near the GBs, which may suppress recombination as in the case of undoped n-BaSi 2 epitaxial films on a single crystal Si (111)

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Section: Methodsmentioning

confidence: 99%

Potential variation around grain boundaries in BaSi2 films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy

Baba

Hara

Tsukahara

et al. 2014

Journal of Applied Physics

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“…Among such materials, we have paid much attention to orthorhombic barium silicide (BaSi 2 ) [1,2]. BaSi 2 is composed of abundant chemical elements Si and Ba in the earth's crust, and can be grown epitaxially on a Si(111) substrate by reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE) [3][4][5][6]. The conduction-band minimum and the valence-band maximum are calculated to be at (0 1/2 1/2)), and at around (0 1/3 0) along the -(0 1/2 0) direction, respectively [7,8].…”

Section: Introductionmentioning

confidence: 99%

Photoresponse properties of BaSi2 epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells

et al. 2011

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We have successfully grown 360-nm-thick undoped n-BaSi 2 epitaxial layers on the n + -BaSi 2 /p + -Si (111) tunnel junction, by molecular beam epitaxy. The external quantum efficiency reached approximately 17.8% at 500 nm under a reverse bias voltage of 4 V at room temperature, the highest value ever reported for semiconducting silicides. The quantum efficiency was compared to 240-nm-thick undoped n-BaSi 2 epitaxial layers on a p-Si(111) substrate.

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“…4,5,9,[11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] The key question regarding these phases is whether they are simple alkaline-earth adatom structures or more complex surface alloys. Adatom models 8,28 fail to reproduce STM images of the (3×2) phase, 17,25,27 while alloy models 9,10,25 require significant Si dimer movement to occur at temperatures well below those typically required for mass transport on Si surfaces.…”

Section: Introductionmentioning

confidence: 99%

Formation of alkaline-earth template layers on Ge(100) for oxide heteroepitaxy: Self-organization of ordered islands and trenches

et al. 2011

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The first step required for oxide heteroepitaxy with atomically abrupt interfaces on Si and Ge(100) is the formation of an alkaline earth template layer. The atomic structure of this template layer on Ge(100) was characterized using scanning tunneling microscopy (STM) and electron diffraction. At elevated temperatures, Sr immediately roughens the surface; a transition that can be associated with Sr displacing Ge from the surface. With increasing Sr coverage a series of ordered (3×4), (3×2), (9×1) and (6×1) phases were observed. Transitions between these phases were accompanied by morphological changes: formation of the (3×4) phase smoothed surface; transition to a local (3×2) ordering was accompanied by trench formation; ordering of the trenches led to the (9×1) structure; and finally the (6×1) structure was characterized by atomic rows.For both Sr and Ba, highly ordered arrays of one-dimensional islands could be produced with double height steps preventing orthogonal domain formation. We associate the morphological transitions with strain relief of the surface phases and interactions of step ledges.

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BaSi2 and thin film alkaline earth silicides on silicon

Abstract: Effect of interface defect formation on carrier diffusion and luminescence in In0.2Ga0.8As/Al x Ga1−x As quantum wells

Cited by 123 publications

References 8 publications

Potential variation around grain boundaries in BaSi2 films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy

Potential variation around grain boundaries in BaSi2 films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy

Photoresponse properties of BaSi2 epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells

Formation of alkaline-earth template layers on Ge(100) for oxide heteroepitaxy: Self-organization of ordered islands and trenches

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