Basic Properties of Diamond: Phonon Spectra, Thermal Properties, Band Structure

Davies, Gordon

doi:10.1002/9780470740392.ch1

Cited by 2 publications

(2 citation statements)

References 90 publications

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“…Diamond has a number of excellent properties such as the highest known thermal conductivity (TC), wide energy bandgap, high electron and hole mobility, widest optical transparency window, and chemical inertness, which make it a unique solid-state material and desirable for several technological applications. The high TC provides strong motivation for integrating diamond into electronic devices for thermal management purposes [1]. In addition to high TC, diamond is electrically insulating compared with other high TC materials (e.g., copper), which makes diamond a better choice for low dielectric loss needed applications such as gallium nitride (GaN)-based power devices [2].…”

Section: Introductionmentioning

confidence: 99%

A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN

2019

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Diamond has the most desirable thermal properties for applications in electronics. In principle, diamond is the best candidate for integration with other materials for thermal management due to its high thermal conductivity. Therefore, if low thermal boundary resistance can be developed between diamond and the semiconductor material, it would most effectively channel the heat away from areas of high power dissipation. Recent advancement of N-polar GaN in high power RF and conventional power electronics motivated us to study the diamond/Si3N4/GaN interface to understand how effectively the heat can be transferred from the GaN channel to diamond heat-sink. Prior studies showed that there are challenges in incorporating diamond with GaN while still maintaining the high crystalline quality necessary to observe the desirable thermal properties of the material. Therefore, in this study we investigated the influence of methane concentration (0.5–6%), gas pressure (40–90 Torr), sample surface temperature (600–850 °C), and growth duration (1 ~ 5 h) on polycrystalline diamond growth. The diamond/Si3N4/GaN interface looks abrupt with no signs of etching of the GaN for the samples with methane concentration above 2%, pressures up to 90 Torr, and temperatures < 850 °C, allowing for incorporation of diamond close to the active region of the device. This approach contrasts with most prior research, which require surface roughening and thick growth on the backside.

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Section: Introductionmentioning

confidence: 99%

A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN

2019

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“…Diamond is very special because of its outstanding physical and chemical properties among the group IV semiconductors; it is well-known to be not only extremely hard but also a wide-gap semiconductor (E g $ 5:5 eV) with high mobility for both types of carriers, an excellent heat conductor, and chemically inert. 1,2) In the light of these properties, it would be very desirable to fabricate a semiconductor power device, a high-frequency device, and a high-temperature and/or a high-radiation resistive device using diamond. [3][4][5][6][7][8] To date, however, the practical application of diamond as an electronic device has been limited by difficulties involved in the introduction of dopant impurities into the diamond crystal.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Dopant Activation in B-Implanted Diamond by High-Temperature Annealing

Tsubouchi

Ogura

2008

jjap

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In this paper, we present the effect of postimplantation high-temperature annealing at 1600 C on electrical properties and lattice structures of B-implanted diamonds. B multiple ion implantation at 30 -360 keV was performed to make a B boxprofile of 5 Â 10 18 or 5 Â 10 19 cm À3 into high-pressure, high-temperature type IIa diamond substrates at 400 C, followed by 1450 C and higher temperature annealing at 1600 C. Optical transmission spectra indicated that radiation damage was almost eliminated with an increase in annealing temperatures to 1600 C in both samples. In the sample of 5 Â 10 18 cm À3 , the hole concentration and the Hall mobility were 2 Â 10 13 cm À3 and 55 cm 2 V À1 s À1 after 1450 C annealing, respectively. By contrast, after 1600 C annealing, their values increased to 6:5 Â 10 13 cm À3 and 82 cm 2 V À1 s À1 , respectively. The doping efficiency of the sample after 1600 C annealing is $50%, which is the highest ever reported for B-implanted diamond. In the sample of 5 Â 10 19 cm À3 , the band conduction of carriers was observed after 1450 C annealing, while high-temperature annealing at 1600 C resulted in the appearance of hopping conduction in the low-temperature region below 400 K. In cathodoluminescence spectra of the samples annealed at 1600 C, the peak intensities around 780 nm, originating from radiation defects frequently observed in ion implanted diamond, decreased, while a broad band centering around 560 nm appeared. The results of this study suggest that high-temperature annealing over 1450 C is effective for elimination of radiation damage and an increase in the acceptor concentration.

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Basic Properties of Diamond: Phonon Spectra, Thermal Properties, Band Structure

Cited by 2 publications

References 90 publications

A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN

A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN

Enhancement of Dopant Activation in B-Implanted Diamond by High-Temperature Annealing

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