An effective design principle has been applied to photonic crystal waveguide bends fabricated in silicon-on-insulator material using deep UV lithography resulting in a large increase in the low-loss bandwidth of the bends. Furthermore, it is experimentally demonstrated that the absolute bandwidth range can be adjusted in a post-fabrication thermal oxidation process.Introduction: The planar photonic crystal waveguide (PhCW) has numerous potential applications because of its unique capability to control the propagation of light by utilising the photonic bandgap (PBG) effect [1,2]. This effect allows the interaction between light and the PhCW to take place on a minute scale [3,4]. Thereby, the overall size of optical components based on PhCW structures may be greatly minimised and, correspondingly, device packing density increased. Recent advances in deep UV lithography at 248 nm [5] have made mass fabrication of optical ultra-compact PhCW devices viable by employing existing fabrication methods commonly encountered in the semiconductor electronics industry.Research has now reached a level where existing fabrication technologies allow manufacture of PhCW structures with low propagation losses [6][7][8][9]. Hence, there is presently worldwide focus on the design and fabrication of PhCW structures possessing adequate bandwidths. PhCW structures with 20-40 nm useful optical bandwidths have previously been demonstrated [3,10,11]. Recently, Borel et al. [12] have demonstrated that a new inverse design method, topology optimisation, can be utilised to dramatically increase the bandwidth of a PhCW component. However, some of the holes in these components have special sizes and shapes that currently cannot be manufactured using deep UV lithography and, thus, cannot currently be mass fabricated. Except for these topology-optimised structures, no bandgap-based PhCW components have been demonstrated with satisfactory performance in a broad wavelength range.In this Letter, we present an alternative design strategy, which also leads to large bandwidths of PhCW bends, and that is suitable for fabrication utilising deep UV lithography. Furthermore, we demonstrate a simple experimental procedure employing thermal oxidation on how to tune the absolute position of the operational bandwidth for an already fabricated batch of samples.