Basics of Optical Fiber Measurements

Ding, Mingjie; Fan, Desheng; Wang, Wenyu; Luo, Yanhua; Peng, Gang‐Ding

doi:10.1007/978-981-10-1477-2_57-1

Cited by 4 publications

(6 citation statements)

References 22 publications

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“…All in all, it is important to consider the application, device structure, and active layer absorption to make an informed choice for the back electrode. For near-IR sensing applications, a shift toward longer wavelengths is desirable since silica optical fibers are widely employed for optical communication, which exhibit loss minima around 1280 nm and 1550 nm. , The shift deeper into the near-IR region may be achieved in the near future by the synthesis of new ultra-narrow-band gap organic semiconductors with band gaps of E g < 1.0 eV. We expect to see similar performance gains in such systems as in the PCE10:COTIC-4F system when applying Au as an electrode material.…”

Section: Discussionmentioning

confidence: 99%

Optical Expediency of Back Electrode Materials for Organic Near-Infrared Photodiodes

Schopp

Nguyen

Brus

2021

ACS Appl. Mater. Interfaces

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Organic semiconductor devices, including organic photodetectors (OPDs) and organic photovoltaics (OPVs), have undergone vast improvements, thanks to the development of non-fullerene acceptors. The absorption range of such NFA-based systems is typically shifted toward the near-infrared (near-IR) region compared to early-generation fullerene-based systems, rendering organic semiconductor devices suitable for near-IR sensing applications. While most efforts are concentrated on the photoactive materials, less attention is paid to the impact of the back electrodes on the device performance. Therefore, this work focuses on the optical expediency of gold (Au), silver (Ag), aluminum (Al), and graphite as back electrode materials in organic optoelectronics. This work shows that the "one size fits all" methodology is not a valid approach for choosing the back electrode material. Instead, considering the active layer absorption, the active layer thickness, and the intended application is necessary. A traditional polymer/fullerene-based system, poly(3hexylthiophene) with [6,6]-phenyl C 61 butyric acid methyl ester (P3HT:PC 60 BM), and a state-of-the-art narrow-band gap nonfullerene-based system, poly [4,8bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b; 4,5-b′]dithiophene-2,6-diyl-alt-(4-(2-ethy-lhexyl)3fluorothieno[3,4-b]thiophene-)-2-carboxylate-(2-6-diyl)] and 2,2′-((2Z,2′Z)-((5,5′-(4,4-bis(2-ethylhexyl)4H-cyclopenta[1,2-b:5,4-b′]dithiophene-2,6-diyl)bis(4-(( 2ethylhexyl)oxy)thiophene-5,2-diyl))bis(methanylylidene)) bis(5,6-difluoro3-oxo-2,3-dihydro-1Hindene-2,1-diylidene))dimalononitrile (PCE10:COTIC-4F), are investigated by combining optical transfer matrix modeling simulations with experimentally determined recombination and extraction losses. We find that the narrow-band gap system shows performance gains when employing Au as the back electrode. Furthermore, we show that these performance gains are dependent on active layer thickness, yielding the most significance for thin active layers (<100 nm). Such thin, ultra-narrow-band gap devices are the focus of near-IR sensing applications, highlighting the importance of methodically choosing the back electrode. Lastly, the impact of the back electrode on the OPV device performance is outlined.

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Section: Discussionmentioning

confidence: 99%

Optical Expediency of Back Electrode Materials for Organic Near-Infrared Photodiodes

Schopp

Nguyen

Brus

2021

ACS Appl. Mater. Interfaces

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“…The hydroxyl ion (OH) absorption is one of the main absorptions in the case of glass fibers [1]. The OH absorption causes the multiple absorption peaks in the wavelength range from visible to the infrared band [25]. The main source of the scattering loss in optical fiber is due to the Rayleigh scattering [25].…”

Section: Fiber Lossesmentioning

confidence: 99%

“…The OH absorption causes the multiple absorption peaks in the wavelength range from visible to the infrared band [25]. The main source of the scattering loss in optical fiber is due to the Rayleigh scattering [25]. During the fabrication of the optical fiber, the variation of the refractive index is caused by the microscopic variations of fiber material component density, randomly distributed material defects, and inhomogeneous material structure [25].…”

Section: Fiber Lossesmentioning

confidence: 99%

“…The main source of the scattering loss in optical fiber is due to the Rayleigh scattering [25]. During the fabrication of the optical fiber, the variation of the refractive index is caused by the microscopic variations of fiber material component density, randomly distributed material defects, and inhomogeneous material structure [25]. The scale of this index variation is much smaller than the wavelength of interest.…”

Section: Fiber Lossesmentioning

confidence: 99%

“…The scale of this index variation is much smaller than the wavelength of interest. The energy scattering when the propagating light interacts with such small index variation causes the Rayleigh scattering [25]. The significance of the Rayleigh scattering in optical fiber is reduced as the wavelength increases.…”

Section: Fiber Lossesmentioning

confidence: 99%

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A tutorial on fiber Kerr nonlinearity effect and its compensation in optical communication systems

Kumar

2021

J. Opt.

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The advent of silica-based low-cost standard single-mode fibers revolutionized the whole communication industry. The deployment of optical fibers in the networks induces a paradigm shift in the communication technologies used for long-haul information transfer. However, the communication using the optical fibers is affected by several linear and nonlinear effects. The most common linear effects are attenuation and chromatic dispersion, whereas the dominant nonlinear effect is the Kerr effect. The Kerr effect induces a power-dependent nonlinear distortion for the signal propagating in the optical fiber. The detrimental effects of the Kerr nonlinearity limit the capacity of long-haul optical communication systems. Fiber Kerr nonlinearity compensation using digital signal processing (DSP) techniques has been well investigated over several years. In this paper, we provide a comprehensive tutorial, including the fundamental mathematical analysis, on the characteristics of the optical fiber channel, the origin of the Kerr nonlinearity effect, the theory of the pulse propagation in the optical fiber, and the numerical and analytical tools for solving the pulse propagation equation. In addition, we provide a concise review of various DSP techniques for fiber nonlinearity compensation, such as digital back-propagation, Volterra series-based nonlinearity equalization, perturbation theory-based nonlinearity compensation, and phase conjugation. We also carry out numerical simulation and the complexity evaluation of the selected nonlinearity compensation techniques.

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InN crystal habit, structural, electrical, and optical properties affected by sapphire substrate nitridation in N-polar InN/InAlN heterostructures

Gucmann¹,

Kučera²,

Hasenöhrl³

et al. 2021

Semicond. Sci. Technol.

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Indium nitride (InN) is a very promising direct bandgap semiconductor material for near-infrared optoelectronic devices and high speed transistors, however InN growth is much more challenging compared to other III-N semiconductors. In this study we analysed the impact of pre-growth vicinal c-plane sapphire substrate nitridation on the electrical, optical, and strucutral properties of N-polar InN/InAlN heterostructures and the InN crystal habit. While a short cool-down nitridation phase resulted in a high quality InAlN layer and low quality InN layer, it was the opposite for a long cool-down nitridation phase. A trade-off between the electrical and optical properties was observed: the short nitridation cool-down produced InN layers with a higher electron mobility of 629 cm 2 V −1 s −1 and low photoluminescence (PL) emission, and the long one resulted in InN with a ∼21% lower electron mobility of 497 cm 2 V −1 s −1 but strong PL emission. Also, a very different InN crystal habit was observed for either case. The short nitridation cool-down was conducive to the formation of a continuous layer consisting mostly of coalesced downward-pointing hexagonal pyramids, while the long one led to a layer of upward-pointing hexagonal pyramids. The local decomposition of an AlON layer produced by sapphire nitridation and variations in the InAlN surface morphology resulting in a preferential attraction of growth species and localised change in the surface free energy contributions were most likely responsible for these observations. Our results also suggest N-polar buffer layers are likely to produce coalesced InN layers with a high electron mobility, while metal-polar buffer layers may facilitate the growth of high crystal quality pyramidal InN with a strong optical response.

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Basics of Optical Fiber Measurements

Cited by 4 publications

References 22 publications

Optical Expediency of Back Electrode Materials for Organic Near-Infrared Photodiodes

Optical Expediency of Back Electrode Materials for Organic Near-Infrared Photodiodes

A tutorial on fiber Kerr nonlinearity effect and its compensation in optical communication systems

InN crystal habit, structural, electrical, and optical properties affected by sapphire substrate nitridation in N-polar InN/InAlN heterostructures

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