Batch fabrication and operation of GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electrooptic effect device (FET-SEED) smart pixel arrays

High-responsivity optical FET's fabricated on a FET-SEED structure

“…Again, the FET detector has high gain but with different behavior. We observe a peak in the responsivity curve that is attributed to the peak of FET transconductance when plotted as a function of gate voltage [ 3 ] . Measuring …”

Optoelectronic/VLSI

“…In a standard MQW modulator, both doped regions have a larger band gap than the quantum well material so that these regions are transparent. In the FET-SEED, a quantum well is placed in the top ( ) doped region at a carefully controlled distance from the surface [10]. Since it is so thin, it does not induce appreciable light absorption, and so does not affect the performance of the modulators.…”

Quantum Well Optical Switching Devices

“…Fig. 21 shows the actual layer structure for some current circuits [27]. The present state of the art in this technology is that, in the laboratory, small circuits have been operated with 22 fJ input optical energy, and at speeds up to 650 Mb/s.…”