BaTiO3 on LaNiO3 and Si thin films prepared by mist plasma evaporation

Epitaxial Integration of Ferroelectric BaTiO3 with Semiconductor Si: From a Structure- Property Correlation Point of View

“…The grain size is increased with increasing the annealing temperatures, changing from 14 to 55 nm in diameter. It is noted that the BTO films in this work exhibit much smaller grain sizes as compared to other reported BTO films [42,43]. The difference is considered to be the result of the influence of microstructure of the LNO buffer layer.…”

Effect of different buffer layers on the microstructure and dielectric properties of BaTiO3 thin films grown on Si substrates

“…In addition, the field dependent dielectric constant of BTO/Pt/Ti/Si shows a good symmetry, while an obvious asymmetry is found for BTO/LNO/Si. The asymmetry of the field dependent dielectric constant is a common phenomenon that had been repeatedly observed in many ferroelectric thin films, which may be attributed to the asymmetry structure of the top and bottom electrodes and the interface effects between the bottom electrodes and the ferroelectric films [26,27].…”

Preparation of rutile TiO2 thin films by mist plasma evaporation

“…1, which was the same as [9]. The torch tube was a set of triple-coaxial fused quartz tubes, where thermal plasma torch was generated.…”