The high-precision circle center location of a wafer can implement the automatic acquisition of the special die, which is one of the most significant steps in wafer surface defect detection. Due to the larger scale of the wafer and the smaller field of view of the camera, the circular arc edge captured is an approximate line segment and has less arc information. The existing methods are mainly used to locate the circle center of the full or more than half of the circular arc captured by a large field of view camera, and it is extremely difficult to accurately locate the circle center of the wafer. To solve this problem, we propose a novel circle center location method for the large-scale wafer. A method for measuring the system angle in the horizontal plane by calibration is presented. Through the analysis of multiple error sources and the compensation of system angle, the system angle in the horizontal plane is the main source of error that causes the positioning error of the inspection system. Based on the distance constraint and the system angle compensation in the horizontal plane, the edge point set coordinates of multi-segment circular arc images are accurately extracted and transformed in the reference coordinate system. A new hierarchical Bayesian model, which takes the initial circle parameter obtained by an improved method as a priori constraint, is utilized to accurately estimate the circle center and radius of the wafer. The effectiveness of the proposed method is verified by various experiments, which are conducted with real 8-inch and 12-inch wafers using the inspection equipment developed.