BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors

Abstract

Three-independent-gate field-effect transistors (TIGFETs) are a promising next-generation device technology. Their controllable-polarity capability allows for superior design of arithmetic and sequential logic gates. In this paper, the TIGFET technology has been benchmarked against several beyond-CMOS devices. The benchmarking techniques followed a similar approach used by the Nanoelectronic Research Initiative Group. The performance of the 32-bit adder and the 32-bit arithmetic logic unit (ALU) was investigated using the advanced 15-nm technology node. The TIGFET devices were shown to achieve the best energy-delay product (EDP) compared with all other beyond-CMOS devices for the 32-bit adder and competitive EDP for the 32-bit ALU. In particular, TIGFETs have 3.83 times and 1.54 times lower EDP than CMOS high-performance (HP) for the 32-bit adder and the 32-bit ALU, respectively. In addition, TIGFETs were shown to have a similar throughput for the 32-bit ALU compared with CMOS HP. Finally, due to TIGFETs' ultralow leakage current and unique circuit designs, our results show that the standby energy of the 32-bit adder decreased by two orders of magnitude compared with CMOS HP and a decrease of at least one order of magnitude compared with CMOS low-voltage.INDEX TERMS Arithmetic logic gate, beyond-CMOS, gate-all-around, silicon nanowire field-effect transistor (SiNWFET), three-independent-gate.

Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors

“…The real benefit to using the functionality-enhanced TIGFET devices is at the gate-level. These benefits have been investigated in literature [9]- [15] and include the use of TIGFETs in circuit implementations of a dual-V T inverter, dual-V T NAND, 4-1 static multiplexer, 6T static random-access memory, true single phase clocking flip-flop, multiplexer, and power-gated differential cascade voltage switch logic. Of particular interest is the fact that a three-input XOR gate and a three-input MAJ gate can be realized using four TIGFET transistors (plus two and three inverters, respectively).…”

“…4-a. These circuit opportunities are only possible due to the polarity control characteristic of TIGFET technology that allows for higher-level circuit architecture to be designed [15].…”

“…In particular, these abilities include: (1) the dynamic reconfiguration of the polarity of the device (that is, the ability to choose if the channel carrier is effectively n-type or ptype) based on selective biasing of the Schottky gates [7], (2) the dynamic control of the threshold voltage (V t ) due to the dual switching mechanism of thermally-assisted tunneling through Schottky barriers or carrier transport similar to that in conventional MOSFETs [6], and (3) the dynamic control of the subthreshold slope due to a positive feedback induced by weak impact ionization [8]. While the TIGFET's independent control of its three gates allow for complex device-level operations and novel circuit-level architectures [9]- [15]), the trade-off is that the two additional contacted gates required for the TIGFET's functionality boost will lead to an increase in the total device capacitance in comparison to a standard one-gate CMOS device. Thus, there is a need to study the TIGFETs' device-and circuit-level capacitance in order to identify its capability at advanced technology nodes.…”

Functionality Enhanced Memories for Edge-AI Embedded Systems

“…In this context, industry and academia are looking for new computing and memory technologies and architectures that can enable both dense and energy efficient architectures. On one hand, Functionality Enhanced Devices (FED) such as Three Independent Gate Field Effect Transistors (TIGFET) [1] are perceived as a promising opportunity as they (i) are a direct evolution from FinFET technology and (ii) enable dense digital design thanks to their various functionalities such as polarity, sub-threshold slope and threshold voltage control [2]. On the other hand, emerging resistive memory technologies (RRAM) such as filamentary-based RRAM are already penetrating the market as they provide easy technology co-integration with MOS technologies, middle programming voltage and fast switching capabilities [3], [4].…”

Emerging reconfigurable nanotechnologies

“…. $15.00 https://doi.org/10.1145/3240765.3243472 delay (smaller critical paths [43]), area [56], and overall energydelay-product [48] for the entire circuit.…”