Behavior of oxygen vacancies in single-crystal SrTiO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>: Equilibrium distribution and diffusion kinetics

Souza, Roger A. De; Metlenko, Veronika; Park, Dae-Sung; Weirich, Thomas E.

doi:10.1103/physrevb.85.174109

Cited by 197 publications

(222 citation statements)

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“…We were able to decrease the amount of contamination present during annealing by applying an additional annealing step resulting in a less reduced STO substrate. The pre-annealing temperature of 400 °C is high enough to enable the evaporation of most adsorbates, at the same time it is, according to literature, low enough to prevent significant release of oxygen from the substrate at the chosen time scales27. However STO is still reduced to a greater extend than we would expect considering chemically controlled reducing atmospheres232526.…”

Section: Reduction Of Sto Substrates During Annealingmentioning

confidence: 96%

“…For this we heat STO single crystals glued on the holder using Ag-paste for 1 h in our PLD chamber with a rate of 20 °C/min to 800 °C. Utilizing the diffusion constant by de Souza et al 27. we can determine the diffusion length of oxygen vacancies to be 8 mm, when annealing at 800 °C for 1 h, and, therefore, to exceed the sample dimensions.…”

Section: Reduction Of Sto Substrates During Annealingmentioning

confidence: 99%

“…We choose this temperature as it is high enough to evaporate most of the organic solvents and adsorbates, but at the same time no detectable reduction on the chosen time scales appears for STO27. As we will discuss, this leads to varied reduction behavior of the samples.…”

Section: Reduction Of Sto Substrates During Annealingmentioning

confidence: 99%

“…This can be described by Eq. 1 in the Kröger Vink notation24, reflecting the oxygen pressure dependence of the electron concentration in STO23252627.…”

mentioning

confidence: 99%

“…For high oxygen pressures the concentration of oxygen vacancies is further decreased leading to the formation of holes, eventually resulting in p-conductivity observable at elevated temperatures23252627. This process can be described by Eq.…”

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confidence: 99%

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Unraveling the enhanced Oxygen Vacancy Formation in Complex Oxides during Annealing and Growth

Hensling

Gunkel

et al. 2017

Sci Rep

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The reduction of oxides during annealing and growth in low pressure processes is a widely known problem. We hence investigate the influence of mere annealing and of growth in vacuum systems to shed light on the reasons behind the reduction of perovskites. When comparing the existing literature regarding the reduction of the perovskite model material SrTiO3 it is conspicuous that one finds different oxygen pressures required to achieve reduction for vacuum annealing and for chemically controlled reducing atmospheres. The unraveling of this discrepancy is of high interest for low pressure physical vapor depositions of thin films heterostructures to gain further understanding of the reduction of the SrTiO3. For thermal annealing, our results prove the attached measurement devices (mass spectrometer/ cold cathode gauge) to be primarily responsible for the reduction of SrTiO3 in the deposition chamber by shifting the thermodynamic equilibrium to a more reducing atmosphere. We investigated the impact of our findings on the pulsed laser deposition growth at low pressure for LaAlO3/SrTiO3. During deposition the reduction triggered by the presence of the laser plume dominates and the impact of the measurement devices plays a minor role. During post annealing a complete reoxidization of samples is inhibited by an insufficient supply of oxygen.

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Section: Reduction Of Sto Substrates During Annealingmentioning

confidence: 96%

Section: Reduction Of Sto Substrates During Annealingmentioning

confidence: 99%

Section: Reduction Of Sto Substrates During Annealingmentioning

confidence: 99%

“…This can be described by Eq. 1 in the Kröger Vink notation24, reflecting the oxygen pressure dependence of the electron concentration in STO23252627.…”

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confidence: 99%

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confidence: 99%

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