Behavior of selenium in gallium arsenide

Vieland, L.J.; Kudman, I.

doi:10.1016/0022-3697(63)90202-6

Cited by 112 publications

(25 citation statements)

References 14 publications

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“…As is seen in Fig. 7 the results of the calculations are in a good agreement with experimental data on Se doped GaAs [46]. It should be noted that very similar n(No) .…”

Section: Limitations Of Maximum Free Carrier Concentrations In Sesupporting

confidence: 78%

“…It is well recognized that in some cases one cannot achieve a high carrier concentration by either doping, implantation, or diffusion. Thus, in bulk grown GaAs the hi §hest electron concentration which can be achieved by the doping does not exceed-1QI9 em- [ 46]. The highest electron concentration obtained by donor implantation is in the range 3 to 5x 1018 cm-3 ( 47 ,48].…”

Section: Limitations Of Maximum Free Carrier Concentrations In Sementioning

confidence: 99%

“…An example of such a system is the lattice matched Ino.s3Gao.47As/Ino.47Alo.s2As superlattice. In lnAs EFS is located in the conduction band, therefore the primary effect of [36] and from Hall measurements of electron concentration in Se doped GaAs ( •) [ 46] is also shown.…”

Section: Doping Induced Superla Ttice Intermixingmentioning

confidence: 99%

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Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces

Walukiewicz

1989

MRS Proc.

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A recently proposed, new approach to the problem of native defect formation in compound semiconductors is presented. The approach is based on the concept of amphoteric native defects. It is shown that the defect formation energy as well as structure and properties of simple native defects depend on the location of the Fermi level with respect to an internal energy reference: the Fermi level stabilization energy. The known location of the stabilization energy determines the electronic part of the defect formation energy and allows for a quantitative description of a variety of phenomena including: the formation of defects at metal-semiconductor interfaces, doping induced superlattice intermixing and limitations of free carrier concentrations in semiconductors.

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“…As is seen in Fig. 7 the results of the calculations are in a good agreement with experimental data on Se doped GaAs [46]. It should be noted that very similar n(No) .…”

Section: Limitations Of Maximum Free Carrier Concentrations In Sesupporting

confidence: 78%

Section: Limitations Of Maximum Free Carrier Concentrations In Sementioning

confidence: 99%

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Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces

Walukiewicz

1989

MRS Proc.

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“…For example, it has been proposed that at high concentrations Se donors form electrically inactive complexes [37]. In the case of group IV dopants, an obvious explanation was based on the amphoteric nature of these impurities.…”

Section: Maximum Doping Limits In Gaasmentioning

confidence: 99%

“…On the other hand, n-type doping is much more difficult to achieve. The doping becomes less efficient for donor concentrations larger than about 3 × 10 18 cm −3 and the maximum electron concentration saturates at a level slightly above 10 19 cm −3 [37][38][39][40]. The maximum concentration does not depend on the dopant species or the method by which the dopants are introduced into the crystal.…”

Section: Maximum Doping Limits In Gaasmentioning

confidence: 99%

Defects and Self-Compensation in Semiconductors

Walukiewicz

2006

Wide-Gap Chalcopyrites

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Defect formation and doping limits in semiconductors are discussed in terms of the amphoteric defect model (ADM). It is shown that the nature of defects, acceptor-like or donor-like, depends on the location of the Fermi energy relative to a common energy reference, the Fermi level-stabilization energy. The maximum free electron or hole concentration that can be achieved by doping is an intrinsic property of a given semiconductor and is fully determined by the location of the semiconductor band edges with respect to the same energy reference. The ADM provides a simple phenomenological rule that explains experimentally observed trends in free carrier saturation in a variety of semiconductor materials and their alloys. The predictions of a large enhancement of the maximum electron concentration in III-N-V alloys have been recently confirmed by experiment.

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Atomic diffusion in semiconductor epitaxial structures

Dzhafaröv

1977

Phys. Stat. Sol. (a)

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Behavior of selenium in gallium arsenide

Cited by 112 publications

References 14 publications

Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces

Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces

Defects and Self-Compensation in Semiconductors

Atomic diffusion in semiconductor epitaxial structures

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