Behavioral Analysis of Potential Induced Degradation on Photovoltaic Cells, Regeneration and Artificial Creation

Mirtchev, Alex V.; Mouselinos, Theodoros P.; Syrigos, Stylianos P.; Tatakis, Emmanuel C.

doi:10.3390/en14133899

Cited by 5 publications

(5 citation statements)

References 17 publications

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“…Previous research [24,25], has suggested that the PID test can result in a nearly 20-30% drop in the output power, even for healthy PV modules. For the examined PV modules, the comparison between the output power loss at STC conditions before and after the PID test is shown in Figure 13, using an I-V curve illustration.…”

Section: Pid Testingmentioning

confidence: 99%

Inequalities in photovoltaics modules reliability: From packaging to PV installation site

Dhimish

Ahmad²,

Tyrrell

2022

Renewable Energy

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Section: Pid Testingmentioning

confidence: 99%

Inequalities in photovoltaics modules reliability: From packaging to PV installation site

Dhimish

Ahmad²,

Tyrrell

2022

Renewable Energy

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“…Electronic devices often function at elevated temperatures and under operational voltages. [ 6,37,38 ] ICDs are therefore susceptible to heat and bias stress conditions. Additionally, PV modules are exposed to UV radiation due to their placement outdoors.…”

Section: Passivation Stability Of Ion‐charged Oxide Nanolayersmentioning

confidence: 99%

Ion‐Charged Dielectric Nanolayers for Enhanced Surface Passivation in High Efficiency Photovoltaic Devices

Al‐Dhahir

Niu

et al. 2023

Adv Materials Inter

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limitation in achieving high efficiency is the recombination of electrons and holes at the silicon surface. For high efficiency PERC and TOPCon structures to exploit their full performance, superb passivation techniques are required at surfaces and interfaces in the cell. [1] A common method to reduce surface recombination is to deposit a dielectric thin film, typically a double layer of SiO 2 /SiN x , upon the silicon surface. This serves to chemically passivate the surface, while the dielectric's intrinsic charge provides an electric field that modulates charge carrier population and further reduces recombination. [2] The latter effect is commonly termed field effect or charge assisted passivation and can be exploited in a variety of solar cell technologies. [3,4] The effectiveness of such dielectrics can be further improved by extrinsic methods that modify the film properties after deposition. This work explores how field effect surface passivation in thin film dielectrics can be enhanced by adding extrinsic ionic charge. We term this kind of charged thin film an "ion-charged dielectric."In ion-charged dielectrics (ICDs), cations or anions are purposely embedded inside of the dielectric with the purpose of producing a large and permanent electric field. Such charge can add functionality and improve the performance of electronic devices, especially the surface passivation of silicon solar cells. [5] To date, the electric field in ICDs has been primarily demonstrated using embedded potassium and sodium cations, [6][7][8][9] with some work also using cesium ions. [10,11] While the field effect provided by such ions has shown promising results, it is possible that alternative positive and negative ions can provide greater control and stability. Methods of incorporating ions into dielectrics include ion implantation, [12] in situ delivery during oxidation, [6,8] or wet delivery prior to chemical vapor deposition. [10,11] Recently, a novel method of introducing ions to dielectrics extrinsically, after deposition, was proposed by the authors. [13,14] In this method an aqueous precursor containing KCl is thermally evaporated onto the SiO 2 surface followed by elevated temperature annealing to drive the ions to the Si-SiO 2 interface. Relying on pure diffusion kinetics, it was found that the transport time of K + ions across SiO 2 varied from several minutes at 500 °C to over an hour at 400 °C. Later work evaluated the transport time of K + ions in the presence of a surface electric field generated by a corona discharge. [7] It was foundThe power conversion efficiency of solar cells is strongly impacted by an unwanted loss of charge carriers occurring at semiconductor surfaces and interfaces. Here the use of ion-charged oxide nanolayers to enhance the passivation of silicon surfaces via the field effect mechanism is reported. The first report of enhanced passivation from rubidium and cesium ion-charged oxide nanolayers is provided. The charge state and formation energy of ioncharged silicon dioxide are calculated from ...

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“…Electronic devices often function at elevated temperatures and under operational voltages. 31,42,74 Ion-charged dielectrics are therefore susceptible to heat and bias stress conditions. 31,42,74 Additionally, PV modules are exposed to UV radiation due to their placement outdoors.…”

Section: Stability Of Embedded Alkali Ionsmentioning

confidence: 99%

“…31,42,74 Ion-charged dielectrics are therefore susceptible to heat and bias stress conditions. 31,42,74 Additionally, PV modules are exposed to UV radiation due to their placement outdoors. Accelerated ageing experiments were carried out to determine how alkali ions at the Si-SiO 2 interface respond to such conditions.…”

Section: Stability Of Embedded Alkali Ionsmentioning

confidence: 99%

Electrostatic Tuning of Ionic Charge in SiO₂ Dielectric Thin Films

Al‐Dhahir¹,

Kealy²,

Kelly³

et al. 2022

ECS J. Solid State Sci. Technol.

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Dielectric thin films are a fundamental part of solid-state devices providing the means for advanced structures and enhanced operation. Charged dielectrics are a particular kind in which embedded charge is used to create a static electric field which can add functionality and improve the performance of adjacent electronic materials. To date, the charge concentration has been limited to intrinsic defects present after dielectric synthesis, unstable corona charging, or complex implantation processes. While such charging mechanisms have been exploited in silicon surface passivation and energy harvesters, an alternative is presented here. Solid-state cations are migrated into SiO2 thin films using a gateless and implantation-free ion injecting method, which can provide greater long-term durability and enable fine charge tailoring. We demonstrate the migration kinetics and the stability of potassium, rubidium, and caesium cations inside of SiO2 thin films, showing that the ion concentration within the film can be tuned, leading to charge densities between 0.1-10 x 1012 qcm-2. A comprehensive model of ion injection and transport is presented along a detailed investigation of the kinetics of alkali cations. Integrating ionic charge into dielectrics to produce controlled electric fields can enable new architectures where field effect is exploited for improved electron devices.

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Behavioral Analysis of Potential Induced Degradation on Photovoltaic Cells, Regeneration and Artificial Creation

Cited by 5 publications

References 17 publications

Inequalities in photovoltaics modules reliability: From packaging to PV installation site

Inequalities in photovoltaics modules reliability: From packaging to PV installation site

Ion‐Charged Dielectric Nanolayers for Enhanced Surface Passivation in High Efficiency Photovoltaic Devices

Electrostatic Tuning of Ionic Charge in SiO₂ Dielectric Thin Films

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Behavioral Analysis of Potential Induced Degradation on Photovoltaic Cells, Regeneration and Artificial Creation

Cited by 5 publications

References 17 publications

Inequalities in photovoltaics modules reliability: From packaging to PV installation site

Inequalities in photovoltaics modules reliability: From packaging to PV installation site

Ion‐Charged Dielectric Nanolayers for Enhanced Surface Passivation in High Efficiency Photovoltaic Devices

Electrostatic Tuning of Ionic Charge in SiO2 Dielectric Thin Films

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Electrostatic Tuning of Ionic Charge in SiO₂ Dielectric Thin Films