Behavioral Current-Voltage Model with Intermediate States for Unipolar Resistive Memories

The bipolar and unipolar reversible behavior on the forgetting memristor model

“…A detail comparison between this model and the popular memristor models (The HP [15], the Gale [37], the Simmons [17], the TEAM [22], the compact [24], the Chang [21], the threshold [30], the PWL (piecewise linear) [31], the appropriate [32], the Zhang [23], the Li [16], the Fang [26], the Kim [25]), and the thermophoresis [18] is taken in Table II. We can find that the model as a 3D dynamical system gets a special advantage on describing various memristors with an average number of parameters.…”