Behavioral Study of Single-Event Burnout in Power Devices for Natural Radiation Environment Applications

Zerarka, Moustafa; Austin, Patrick; Toulon, Gaëtan; Morancho, Frédéric; Arbess, Houssam; Tasselli, Josiane

doi:10.1109/ted.2012.2222889

Cited by 49 publications

(14 citation statements)

References 18 publications

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“…Heavy ions inducing destructive failures in power MOSFETs have been extensively studied and are related to the existence of the parasitic BJT inherent to the device [18]. When the heavy ion strikes the device, electron-hole pairs are generated along its track creating an ionized plasma filament.…”

Section: Seb Simulation Resultsmentioning

confidence: 99%

“…Then, the effects of ion species [13] and the sensitive volume for SEB performance of power MOSFETs have been discussed in detail [14], [15]. The research and exploration of SEB in power MOSFETs have been continued in recent years [16], [17], and 2-D simulators are used to investigate SEB performance [18], [19].The time evolution of SEB and the evaluation on protective SEB test method of power MOSFET have also been discussed [20], [21]. Many hardening solutions to SEB of power DMOSFETs have been extensively investigated and tested these years.…”

Section: Introductionmentioning

confidence: 99%

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Single-Event Burnout Hardened Structure of Power UMOSFETs With Schottky Source

Wang

Zhang

Cao

et al. 2014

IEEE Trans. Power Electron.

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This paper investigates the single-event burnout (SEB) simulation results for both the standard and hardened structure of power U-shape gate MOSFETs (UMOSFETs). The Schottky source is proposed to reduce the work of the parasitic bipolar transistor inherent to the device. The hardened structure of power UMOSFETs with the Schottky source and N buffer layer is given, which can work normally and improve the SEB performance effectively. Both 70-and 120-V power MOSFETs are simulated and discussed in this paper. The SEB threshold voltages are increased to more than 94 percent of the breakdown voltages for both 70-and 120-V hardened structure, compared to 54 percent for standard power UMOSFETs.Index Terms-Hardened structure, power UMOSFET, Schottky source, single-event burnout (SEB).

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Section: Seb Simulation Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Single-Event Burnout Hardened Structure of Power UMOSFETs With Schottky Source

Wang

Zhang

Cao

et al. 2014

IEEE Trans. Power Electron.

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“…The aim is to investigate how the commercial power normally-OFF GaN switch behaves at different conditions of heavy ion irradiation (position of tracks, range, and source-drain bias), while trying to find the most critical conditions for SEE and to localize the sensitive volume showing the highest change in residual electric field or trap density after irradiation simulation. These conditions have been also presented in our previous works in order to determine the sensitive volume in Si power devices (Vertical Diffused metal oxide semiconductor and transistor bipolaire à grille isolée) [21], [22].…”

Section: Conditions Of Simulations With Heavy Ionmentioning

confidence: 99%

TCAD Simulation of the Single Event Effects in Normally-off GaN Transistors after Heavy Ion Radiation

Zerarka

Austin

Bensoussan

et al. 2017

IEEE Trans. Nucl. Sci.

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Electrical behavior of commercial off-the-shelf normally-off GaN power transistors under heavy ion irradiation is presented based on technology computer aided design numerical simulation in order to better understand the mechanism of single event effects (SEEs) in these devices. First, the worst case has been defined from the single event transient mechanism. Then, the decrease in the electric field observed after irradiation and the traps effect have been addressed. Finally, possible mechanisms of SEE in these devices under heavy ion are proposed.

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“…P OWER vertical double-diffused MOSFETs (VDMOSFETs) applied in space probes and planetary exploration missions are sensitive to the natural radiation environment (NRE), which is composed of particles of various nature and energy [1]- [4]. Single-event burnout (SEB) is one of the main catastrophic effects that could result in permanent damage in device functionality, and it can be triggered when a heavy ion passes through a MOSFET biased in its OFF-state.…”

Section: Introductionmentioning

confidence: 99%

Research of Single-Event Burnout in Power Planar VDMOSFETs by Localized Carrier Lifetime Control

Wang

Cao

et al. 2015

IEEE Trans. Electron Devices

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This paper presents 2-D numerical simulation results of single-event burnout (SEB) in power planar vertical double-diffused MOSFET (VDMOSFET) with localized carrier lifetime control. A low carrier lifetime control region (LCLCR) is introduced to accelerate the recombination rate of the generated holes caused by an ion's impact. The optimal localized range with LCLCR in epitaxial layer has been investigated. The SEB inhibition mechanism with LCLCR is analyzed and discussed. A VDMOSFET with localized LCLCR can operate like a normal VDMOSFET and can have improved SEB performance effectively. In addition, the leakage current density in breakdown characteristics of VDMOSFET is studied based on the variation of carrier lifetime. Index Terms-Low carrier lifetime control region (LCLCR), numerical simulation, power vertical double-diffused MOSFET (VDMOSFET), single-event burnout (SEB). 0018-9383

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Behavioral Study of Single-Event Burnout in Power Devices for Natural Radiation Environment Applications

Cited by 49 publications

References 18 publications

Single-Event Burnout Hardened Structure of Power UMOSFETs With Schottky Source

Single-Event Burnout Hardened Structure of Power UMOSFETs With Schottky Source

TCAD Simulation of the Single Event Effects in Normally-off GaN Transistors after Heavy Ion Radiation

Research of Single-Event Burnout in Power Planar VDMOSFETs by Localized Carrier Lifetime Control

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