Behaviour of amorphous silicon solar modules: A parameter study

Voswinckel, Sebastian; Wesselak, Viktor; Lustermann, Birgit

doi:10.1016/j.solener.2013.03.006

Cited by 12 publications

(11 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…See Equation 17. 61 In the above equation, PF λ is the photon flux incident on a solar cell that was calculated by using Equation 18 and P 0 represents the power (Wm −2 nm −1 ) of the AM1.5 Direct Solar spectrum at wavelength (nm). 62 (16)…”

Section: Models For Third Generationmentioning

confidence: 99%

See 1 more Smart Citation

Generation and combination of the solar cells: A current model review

Khatibi

Astaraei

Ahmadi

2019

Energy Science & Engineering

104

View full text Add to dashboard Cite

Generally, first and second generations of photovoltaic (PV) cells are including mono‐crystalline silicon, amorphous silicon, and dye‐synthesized solar cells. Investigating the electrical current behavior of these sorts of PV cells shows that a modified multi‐ or single diode(s) model with shunt and series resistance can use as a good choice in a specific range of the current. For other constructions such as multi‐junction PV cells that consist of the third generation, the network models are the best choice. Also, the network models can be used for the first and second generations to improve the validity of model in the wider range of current. In addition to existing generations, PV array and modules, which are serial and parallel arrays of PV cells, will lead to a higher current or voltage. The main disadvantage of using these sorts of systems is their more space occupation. This problem can be solved by using the concentrated PV (CPV) systems that focus the received irradiation on a smaller surface. By considering the generated current, voltage, power, temperature effect, and financial analysis, it seems third‐generation PV systems are more efficient among all the generations. Finally, by considering the ratio of generated current on the occupied space, the CPV systems will be a better choice.

show abstract

Section: Models For Third Generationmentioning

confidence: 99%

“…An equivalent electrical circuit model for amorphous silicon solar cells by considering a second irradiationindependent recombination path. Adopted from Voswinckel et al 61 Copyright (2018), with permission from Elsevier…”

Section: Models For Third Generationmentioning

confidence: 99%

Generation and combination of the solar cells: A current model review

Khatibi

Astaraei

Ahmadi

2019

Energy Science & Engineering

104

View full text Add to dashboard Cite

show abstract

“…Single diode equivalent circuit of solar cell [1,2] is one of the simplest models used to analyze it, although two diode model was also discussed [3,4] in the context of understanding degradation. However, it is obvious that complication in the analysis increases with increased number of unknown parameters.…”

Section: Introductionmentioning

confidence: 99%

“…However, this method may not result in a good estimation of these resistances [3], but can give a good starting point of our simulation. There is a possibility that the slope of the J-V curve near the short circuit condition depends upon recombination loss of the photo generated carriers [5].…”

Section: Introductionmentioning

confidence: 99%

Low Reverse Saturation Current Density of Amorphous Silicon Solar Cell Due to Reduced Thickness of Active Layer

Iftiquar¹,

Yi²

2016

Journal of Electrical Engineering and Technology

View full text Add to dashboard Cite

-One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (N d ) of the active layer on the J-V curve. When the active layer thickness was varied (for N d = 8×10 17 cm -3 ) from 800 nm to 100 nm, the reverse saturation current density (J o ) changed from 3.56×10 -5 A/cm 2 to 9.62×10 -11 A/cm 2 and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N d = 4×10 15 cm -3 ), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J o = 9.62×10 -11 A/cm 2 ) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

show abstract

“…This model added a current variable Irec representing i layer composite loss char acteristics in the pin junction to a photo generated current source, which has been a typical representative of common circuit mode. Later it was extended the circuit model of the amorphous silicon photovoltaic cell into double diode model considering the Stae bler-Wronski effect of amorphous silicon [2].…”

Section: Introductionmentioning

confidence: 99%

Modeling method research of flexible amorphous silicon solar cell

Wang

Han

et al. 2015

Appl. Sol. Energy

View full text Add to dashboard Cite

Circuit model of solarcell is the core section of photovoltaic power generation system simulation model. The modeling methods of flexible amorphous silicon solar cell were studied based on improved pho tovoltaic cell circuit model. A group of flexible amorphous silicon solar cell' I-V and P-V data were teste dunder the condition of standard solar light. After that, Quasi Newton method and self organizing migrating algorithm (SOMA) were adopted to calculate the 8 unknown parameters of circuit model, finally establishing the single diode circuit model of this kind of amorphous silicon thin film solar cell. The optimal results cal culated by self organizing migrating algorithm showed that the standard deviation of the calculated current in the circuit model is less than 0.79%, while the sum of squared residuals is only 0.05%. The model laid a theoretical foundation of performance optimization and maximum power tracking control technology devel opment of flexible amorphous silicon solar cells.

show abstract

Behaviour of amorphous silicon solar modules: A parameter study

Cited by 12 publications

References 6 publications

Generation and combination of the solar cells: A current model review

Generation and combination of the solar cells: A current model review

Low Reverse Saturation Current Density of Amorphous Silicon Solar Cell Due to Reduced Thickness of Active Layer

Modeling method research of flexible amorphous silicon solar cell

Contact Info

Product

Resources

About