Behaviour of implanted oxygen and nitrogen in halogen lamp annealed silicon

Belogorokhov, A. I.; Бублик, В. Т.; Scherbachev, K.D.; Parkhomenko, Yu. N.; Макаров, В. В.; Danilin, A.B.

doi:10.1016/s0168-583x(98)00603-x

Cited by 12 publications

(2 citation statements)

References 4 publications

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“…The mixture of powders of obtained nanosilicon and unreacted silicon was subsequently ultrasonically dispersed in an ethanol and then separated by centrifugation. To check the features of synthesis of nanopowder, including silicon nitride, the Fourier-transform infrared (FTIR) spectra (Bruker) of the samples in the wavenumber region of modified vibrational 500 1000 1500 2000 2500 3000 The spectra of silicon with implanted oxynitride hidden thin layers [13] are shown in Fig. 5, whereas Fig.…”

Section: Resultsmentioning

confidence: 99%

The Properties of Nanosized Silicon Prepared by Plasmochemical and Electrolytic (HCl : HF : C2H5OH ) Techniques

Parkhomenko¹,

Belogorokhov²,

Bliev³

et al. 2013

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The structural and optical properties of nanostructured silicon obtained by plasmachemical and electrolytic techniques are presented. For electrolytic etching of silicon electrolyte the chlorine acid was added to standard HF:C 2 H 5 OH electrolyte. It was found that adding of HCl to the electrolyte slows the process of electrochemical etching thus creating conditions for efficient etching and formation of Si-O and Si-H bonds on the formed nanosilicon surface. In the present study the nanosilicon samples were obtained in ultra-high frequency plasmochemical system by means of recondensation of ultradispersed silicon powder in nitrogen flux heated to mean temperature of 3500 K. Morphology of films was found to consist of quantum nanowires of a mean diameter of 2 nm. Results indicating stability of nanosized silicon (NanoSi) under intense laser irradiation are presented. It is demonstrated that substantial increase of NanoSi photoluminescence signal can be attributed to their specific structure, as well as to the SiO 2 thin film formed on the nanocrystalline surface.

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Section: Resultsmentioning

confidence: 99%

The Properties of Nanosized Silicon Prepared by Plasmochemical and Electrolytic (HCl : HF : C2H5OH ) Techniques

Parkhomenko¹,

Belogorokhov²,

Bliev³

et al. 2013

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“…Some researchers have reported the structural and electrical properties of silicon oxynitride insulating films prepared by conventional techniques (1)(2)(3)(4)(5)(6). However, only a few reports are available in the literature on silicon oxynitride surface layers synthesized by ion-beam techniques (7)(8)(9). From this brief survey, it is evident that the structure and electrical characteristics of ion beam synthesized oxynitride has scope of further investigation.…”

Section: Introductionmentioning

confidence: 99%

Study of Structure and Electrical Characteristics of Silicon Oxynitride Layers Synthesized by Dual Ion Implantation in Silicon and their Annealing Behaviour

Yadav¹,

Bhatt²,

Dubey³

2007

ECS Trans.

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30 keV low-energy ion-implantor was used to synthesize silicon oxynitride (Si x O y N z ) insulating layers. The reactive ion-beams of molecular oxygen ( 16 O 2 + ) and nitrogen ( 14 N 2 + ) were co-implanted sequentially into silicon at room temperature in the ratio 1:1 to total fluence level ranging from 5x10 16 to 1x10 18 ions-cm -2 . Characterization of ion-beam synthesized Si x O y N z layers was carried out by X-ray diffraction (XRD) and current-voltage (I-V) measurements before and after rapid thermal annealing (RTA) treatments at different temperatures. XRD studies of the as implanted samples indicate formation of oxynitride layers with the presence of implanted oxygen mostly in the oxide phase and nitrogen in the dissolved form in the implanted silicon layer. RTA of the samples at higher temperature results in the transformation of oxide and nitride into new phases. Alion-beam synthesized oxynitride-Si (MIS) devices were fabricated with as implanted and annealed samples to study current density voltage (J-V) characteristics. These results show ohmic conduction at low voltages and non-ohmic behavior at higher fields. Results obtained in the present work show higher electrical resitivity and the lower trap density for the ion-beam synthesized oxynitride films than those films prepared by other methods.Introduction The low energy reactive ion-implantation in silicon at high fluence (≥ 10 16 ) ions-cm -2 levels can be used to produce new materials with compositions and structures unattainable by conventional techniques. The synthesis of surface layers of silicon oxynitride by reactive oxygen and nitrogen ion-implantation into silicon is technologically important for the device processes. The composition, structure and electrical properties of the silicon oxynitride layers are found to depend strongly on the method of preparation and annealing treatments. Thus, it is necessary to establish the structural properties of such films prepared by different techniques with desired electrical characteristics for semiconductor device applications. Some researchers have reported the structural and electrical properties of silicon oxynitride insulating films prepared by conventional techniques (1-6). However, only a few reports are available in the literature on silicon oxynitride surface layers synthesized by ion-beam techniques (7-9). From this brief survey, it is evident that the structure and electrical characteristics of ion beam synthesized oxynitride has scope of further investigation. Earlier, we have reported FTIR [Fourier Transform Infrared] (10,11) structural properties and ESR [Electron Spin Resonance] (12) defects of silicon oxynitride (Si x O y N z ) layers synthesized by high fluence reactive ion implantation into silicon ranging from 5x10 16 to 1x10 18 ions-cm -2 at 30keV. The present work aims to understand the formation of silicon oxide-nitride phases in oxygen-nitrogen co-implanted silicon following RTA (Rapid Thermal Annealing) in N 2 atmosphere by X-ray diffraction studies and its electrical charact...

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Structural studies of silicon oxynitride layers formed by low energy ion implantation

Chauhan¹,

Yadav²,

Dubey³

et al. 2008

Nuclear Instruments and Methods in Physics Research Section B:

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Behaviour of implanted oxygen and nitrogen in halogen lamp annealed silicon

Cited by 12 publications

References 4 publications

The Properties of Nanosized Silicon Prepared by Plasmochemical and Electrolytic (HCl : HF : C<sub>2</sub>H<sub>5</sub>OH ) Techniques

The Properties of Nanosized Silicon Prepared by Plasmochemical and Electrolytic (HCl : HF : C<sub>2</sub>H<sub>5</sub>OH ) Techniques

Study of Structure and Electrical Characteristics of Silicon Oxynitride Layers Synthesized by Dual Ion Implantation in Silicon and their Annealing Behaviour

Structural studies of silicon oxynitride layers formed by low energy ion implantation

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