Behaviour of Oxygen and Nitrogen Atoms Sequentially Implanted into Silicon

In this work SOI structures with buried SiO 2 -Si 3 N 4 -SiO 2 layers have been fabricated by the ZMRtechnique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtained results were compared with electrical measurements. It is shown that optimization of the preparation processes of the initial buried dielectric layers provides ZMR SOI structures with multilayer buried isolation, which are of high quality for both Si film interfaces. Particular attention is paid to the investigation of radiation-induced charge trapping in buried insulators. Buried isolation structures with a nitride layer exhibit significant reduction of radiation-induced positive charge as compared to classical buried SiO 2 layers produced by either the ZMR or the SIMOX technique.

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Behaviour of Oxygen and Nitrogen Atoms Sequentially Implanted into Silicon

Cited by 2 publications

References 15 publications

Behaviour of implanted oxygen and nitrogen in halogen lamp annealed silicon

Behaviour of implanted oxygen and nitrogen in halogen lamp annealed silicon

Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

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