Behaviour of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B<sub>2</sub>O<sub>3</sub>

Taishi, Toshinori; Hashimoto, Yuichi; Ise, Hideaki; Murao, Yu; Ohsawa, Takashi; Tokumoto, Yuki; Ohno, Yutaka; Yonenaga, Ichiro

doi:10.1088/1742-6596/281/1/012011

Cited by 4 publications

(1 citation statement)

References 16 publications

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“…The origin of such carriers was based on OTDs [22], and could be annihilated by post-annealing at 550 °C for 1h with subsequent cooling to RT. All crystals were n-type conduction before and after annealing, and the B concentration in all crystals was lower than the detection limit of SIMS analysis of 2  10 15 cm -3 .…”

Section: Growth Of Ge Crystals From a Melt Fully Covered By Liquid B mentioning

confidence: 99%

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

Taishi

Hashimoto

Ise

et al. 2012

Journal of Crystal Growth

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We propose two unique Czochralski (CZ) techniques for growing germanium (Ge) crystals with an extremely low dislocation density and high interstitial oxygen concentration ([Oi]) using boron oxide (B 2 O 3 ) and a silica crucible. When a Ge melt is partially covered with liquid B 2 O 3 , but only on the outer region of the melt surface, germanium-oxide (GeO 2 )-related particles forming naturally in the melt are effectively dissolved by the liquid B 2 O 3 . The clean central portion of the melt produces dislocation-free undoped or Ga-doped Ge crystals. In addition, Ge crystals with [Oi] up to 6  10 17 cm -3 can be grown from a melt fully covered by liquid B 2 O 3 with added GeO 2 powder. The reaction and transportation of oxygen atoms during the growth process using B 2 O 3 was investigated, revealing that liquid B 2 O 3 acts like a catalyst without heavy contamination of the growing Ge crystal by B and Si atoms.

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Section: Growth Of Ge Crystals From a Melt Fully Covered By Liquid B mentioning

confidence: 99%

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

Taishi

Hashimoto

Ise

et al. 2012

Journal of Crystal Growth

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Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method

Yonenaga

Taishi

Ise

et al. 2012

Physica B: Condensed Matter

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Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies

Inoue

Taishi

Tokumoto

et al. 2013

Journal of Applied Physics

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The kinetics of the reduction of interstitial oxygen (Oi) due to the formation of thermal double donors (TDDs) upon heat treatment in an oxygen-rich Ge crystal were investigated at various temperatures. Specimens were prepared from a Ge crystal with oxygen at a concentration of 4–5 × 1017 cm−3 grown by a new Czochralski method and were heat-treated in the temperature range 300–500 °C. Shrinkage of a dissolved oxygen absorption peak at 855 cm−1 and simultaneous development of a thermal double donor peak at 780 cm−1 were observed by infrared absorption spectroscopy at room temperature. The formation of TDDs was also detected electrically. Reduction of dissolved oxygen concentration upon the heat treatments was kinetically analyzed. The activation energy of the reduction of Oi concentration was evaluated to be 1.7 and 2.0 eV in the early and prolonged stages of the heat treatment, respectively, close to that of Oi diffusion. From the results, TDD development process was indicated to be the merge reaction of Oi-Oi to form oxygen dimers (Odimer) in the early stage of the heat treatment and further enlargement of Odimer to TDDs by absorbing Oi in the prolonged stage of the heat treatment in accordance with the On-2NN model.

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Behaviour of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B₂O₃

Cited by 4 publications

References 16 publications

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method

Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies

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Behaviour of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B2O3

Cited by 4 publications

References 16 publications

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method

Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies

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Behaviour of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B₂O₃