Behavioural Electro-Thermal Modelling of SiC Merged PiN Schottky Diodes

Zubert, Mariusz; Janicki, Marcin; Napieralska, M.; Jablonski, Grzegorz; Starzak, Lukasz; Napieralski, A.

doi:10.1007/978-3-642-22453-9_24

Cited by 4 publications

(4 citation statements)

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“…All the coefficients in (1)–(9) can be extracted numerically from forward and reverse static V–I characteristics for different temperatures [15]. This task is easier if relationships (1) and (7) are rearranged to avoid the rapidly increasing exponential function, yielding

V_{normald} = V_{itr} + V_{ref} \ln I_{fwd} + R_{normals} I_{fwd}

- V_{jun} = A_{rev}^{- 1} \ln ()(, B_{rev}^{- 1} I_{rev})

…”

Section: Basic Static Modelmentioning

confidence: 99%

Improvement of an electro‐thermal model of SiC MPS diodes

Starzak¹,

Stefanskyi²,

Zubert³

et al. 2018

IET Power Electronics

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This study presents improvements introduced in a behavioural electro-thermal model of silicon carbide merged PIN-Schottky (SiC MPS) diodes, aimed at a better representation of device characteristics for a more accurate prediction of power dissipation. In the electrical domain, the junction capacitance model has been thoroughly validated with a new parameter extraction procedure, yielding realistic values of the turn-off charge as well as current and voltage waveforms for various operating conditions, which is crucial for dynamic loss evaluation. The validity of the thermal sub-model has been extended by reflecting the temperature dependence of thermal conductivity. As a result, temperature evolution on both the long and short time scales is properly computed, providing correct on-state voltage drop and on-state power loss results. Device behaviour with a heat sink attached is also correctly simulated.

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V_{normald} = V_{itr} + V_{ref} \ln I_{fwd} + R_{normals} I_{fwd}

- V_{jun} = A_{rev}^{- 1} \ln ()(, B_{rev}^{- 1} I_{rev})

…”

Section: Basic Static Modelmentioning

confidence: 99%

Improvement of an electro‐thermal model of SiC MPS diodes

Starzak¹,

Stefanskyi²,

Zubert³

et al. 2018

IET Power Electronics

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“…The research presented in [10,15] shows that classical Shockley's equation [17] cannot be used for electric domain description. In the authors' opinion, these inconsistencies may be due to these devices being manufactured as merged PIN-Schottky diodes with additional p-islands [18]. In a regression-based analysis of the MPS electro-thermal model [19], the temperature T is linearly or quadraticly related to internal resistance series resistance R s and intrinsic voltage drop V intrsc .…”

Section: Behavioral Electro-thermal Models Of Merged Sic Diodementioning

confidence: 99%

“…Thermal behaviour of semiconductor devices and cooling assemblies can be predicted by Compact Thermal Models (CTMs), which can be derived adopting the structural or the behavioural approach [20], [14], [23]. The detailed SPICE behavioural model of Infineon and Cree MPS devices are presented in [10], [21], [16], [15].…”

Section: Behavioral Electro-thermal Models Of Merged Sic Diodementioning

confidence: 99%

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Recent research in VLSI, MEMS and power devices with practical application to the ITER and dream projects

et al. 2014

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Several MEMS (Micro Electro-Mechanical Systems) devices have been analysed and simulated. The new proposed model of SiC MPS (Merged PIN-Schottky) diodes is in full agreement with the real MPS devices. The real size DLL (Dynamic Lattice Liquid) simulator as well as the research on modelling and simulation of modern VLSI devices with practical applications have been presented. Based on experience in the field of ATCA (Advanced Telecommunications Computing Architecture) based systems a proof-of-concept DAQ (data acquisition) system for ITER (International Thermonuclear Experimental Reactor) have been proposed.

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