An accurate electro-thermal model for merged SiC PiN Schottky diodes

Recent research in VLSI, MEMS and power devices with practical application to the ITER and dream projects

“…This has made possible the manufacturing of high voltage unipolar devices reaching very high operating frequencies. As a consequence, the most frequently used SiC devices are Merged PIN-Schottky (MPS) diodes [10].…”

“…Electrical phenomena in Schottky diodes during conduction and switching are generally simpler as compared to PIN diodes, which renders behavioural modelling feasible. However, SiC MPS diodes exhibit nonlinear behaviour when temperature influence is involved [12] what requires the development of dedicated models [10]. Moreover, even though switching processes are very short as compared to thermal time constants, they may soon become more important as switching frequencies are increased.…”

“…The first SiC diodes made available by device manufacturers were subjected to tests which showed serious inconsistencies between simulated and measured behaviour (see [10,15] and also [11]). The research presented in [10,15] shows that classical Shockley's equation [17] cannot be used for electric domain description. In the authors' opinion, these inconsistencies may be due to these devices being manufactured as merged PIN-Schottky diodes with additional p-islands [18].…”

“…where p 1 ,…, p 7 are empirical constant coefficients. Equation 1is equivalent to the form suitable for numerical simulations [16]:…”

Behavioural Electro-Thermal Modelling of SiC Merged PiN Schottky Diodes

“…Originally, the model was developed for the SDP04S60 diode (2-nd generation MPS SiC diodes). The measurements were taken for the following case temperature values: 2 ı C, 2:5 ı C, 15 ı C, 25 ı C and 35 ı C 120 ı C with the step of 5 ı C. Then, the model was verified for the SDP10S30, CSD04060, CSD10030 (all 2-nd gen.) and C3D04060 (3-rd gen.) diodes for the case temperatures ranging from 25 ı C to 150 ı C with the step of 25 ı C. The detailed measurement procedure was described in [4]. The proposed electro-thermal behavioural static model of MPS diodes, pictured in Fig.…”