Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe₂Schottky diodes

Magnetic, structural and transport properties across the Heusler alloy (Co2FeAl)/n-Si interfacial structure

“…The tunnelling of the carriers across the interface seems to be a dominant mechanism of carrier injection from the observed large reverse current and large ideality factor (g = 14 at RT) for the structure. Similar results have also been observed in our previous report [14] and by other researchers [17][18][19][20]. Deviation of the g value from unity can be understood due to the contribution from tunnel conduction, interfacial inhomogeneties and interface states.…”

“…E 0 depends on characteristics tunnelling energy Figure 7 shows the temperature dependence of I t and E 0 which is nearly temperature independent. Similar results have also been observed by other groups [17][18][19][20] which supports that tunnelling is a dominant transport mechanism for the reverse bias. The I-V characteristics were also measured in the presence of external magnetic field.…”