Beiträge zur systematischen Verwandtschaftslehre. Tensionsanalyse der höheren Manganphosphide

Biltz, Wilhelm; Wiechmann, Friedel; Meisel, Karl

doi:10.1002/zaac.19372340203

Cited by 22 publications

(13 citation statements)

References 9 publications

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“…By heating the reactants directly to 850 8C, the chlorides (MoCl 5 or WCl 6 ) and S quickly evaporate and simultaneously react. Similar to the reactions detailed in references [29][30][31], which were highly exothermic at elevated temperatures, ignition of the present reaction at high temperature led to a very rapid and sometimes explosive reaction progression. This rapid reaction might lead to a high degree of supersaturation of the vapor and hence, to fast nucleation.…”

Section: Formation Of Mos 2 and Ws 2 If Nanoparticlessupporting

confidence: 54%

“…Reaction mechanism: Reported strategies for the synthesis of sulfides, [8,26,[28][29][30] especially the reactions between chlorides and a mixed gas of H 2 S and H 2 , [8,28] gives us a good understanding of the reaction mechanism of MoCl 5 /WCl 6 and S. In the well-known reaction of MoCl 5 and H 2 S/H 2 , H 2 is used as the additional reductant [Eq. (1)].…”

Section: Mos 2 and Ws 2 Nanotubes And Nanoflowersmentioning

confidence: 99%

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Atmospheric Pressure Chemical Vapor Deposition: An Alternative Route to Large‐Scale MoS₂ and WS₂ Inorganic Fullerene‐like Nanostructures and Nanoflowers

2004

Chemistry A European J

153

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Large-scale MoS2 and WS2 inorganic fullerene-like (IF) nanostructures (onionlike nanoparticles, nanotubes) and elegant three-dimensional nanoflowers (NF) have been selectively prepared through an atmospheric pressure chemical vapor deposition (APCVD) process with the reaction of chlorides and sulfur. The morphologies were controlled by adjusting the deposition position, the deposition temperature, and the flux of the carrier gas. All of the nanostructures have been characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). A reaction mechanism is proposed based on the experimental results. The surface area of MoS2 IF nanoparticles and the field-emission effect of as-prepared WS2 nanoflowers is reported.

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Section: Formation Of Mos 2 and Ws 2 If Nanoparticlessupporting

confidence: 54%

Section: Mos 2 and Ws 2 Nanotubes And Nanoflowersmentioning

confidence: 99%

Atmospheric Pressure Chemical Vapor Deposition: An Alternative Route to Large‐Scale MoS₂ and WS₂ Inorganic Fullerene‐like Nanostructures and Nanoflowers

2004

Chemistry A European J

153

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“…They confirmed the existence of the non-stoichiometric 'sesquisulphide' first noted by Biltz, Ehrlich & Meisel (1937), and proposed a structure for Ti3S 4 in the space group P6Jmmc similar to that of titanium phosphide (SchSnberg, 1954) but with the metal atoms randomly occupying only three-quarters of the octahedral sites available to them. A parallel examination of this particular phase had already been made in this laboratory as part of a more general study of the chalcogenides of the Group IV metals (McTaggart & Wadsley, 1957).…”

supporting

confidence: 54%

Partial order in the non-stoichiometric phase Ti_2+xS₄(0.2<x<1)

Wadsley¹

1957

Acta Cryst

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“…Between MnP and P, only the phase MnP3 was found by Biltz, Wiechmann & Meisel (1937). Its structure is still not known.…”

Section: Introductionmentioning

confidence: 99%

High-pressure MnP₄, a polyphosphide with Mn–Mn pairs

Jeitschko¹,

Donohue²

1975

Acta Crystallogr Sect B

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The new compound MnP4 was prepared by reaction of the elemental components at pressures of 30-55 kbar in a tetrahedral anvil high-pressure device. It is a diamagnetic semiconductor with an activation energy of 0-14 eV and crystallizes with space group C2/c, a= 10.513 (1), b= 5.0944 (4), c= 21-804 (2) A, fl=94-71 (1) °, and Z= 16. The structure was determined from single-crystal counter data by Patterson and Fourier methods and refined to a conventional R of 0.051 for 1765 reflections. The Mn atoms are in octahedral P coordination, and the P atoms are tetrahedrally coordinated by Mn and P atoms. The Mn atoms have formal oxidation number 2 + (d 5 configuration). Four MnP6 octahedra share edges to form a linear array of four Mn atoms. The Mn atoms are displaced from the centers of the octahedra toward one another to form pairs with a resulting Mn-Mn bonding distance of 2.941 A, thus accounting for the diamagnetism. Average Mn-P and P-P distances are 2.282 and 2-225 ,£,, respectively. MnP4 can be described as an eight-layer stacking variant of the two-layer CrP4 structure, although bonding within and between the layers is of equal strength. Qualitative MO bonding models for the MnP4 and CrP4 structures are presented that allow rationalization of magnetic and conductive properties. A similar bonding proposal is made for the marcasite and arsenopyrite structures which, as is the case for CrP4 and MnP4, have TPo octahedra linked via edges, with transition metal atoms forming infinite strings and pairs, respectively.

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Beiträge zur systematischen Verwandtschaftslehre. Tensionsanalyse der höheren Manganphosphide

Cited by 22 publications

References 9 publications

Atmospheric Pressure Chemical Vapor Deposition: An Alternative Route to Large‐Scale MoS₂ and WS₂ Inorganic Fullerene‐like Nanostructures and Nanoflowers

Atmospheric Pressure Chemical Vapor Deposition: An Alternative Route to Large‐Scale MoS₂ and WS₂ Inorganic Fullerene‐like Nanostructures and Nanoflowers

Partial order in the non-stoichiometric phase Ti_2+xS₄(0.2<x<1)

High-pressure MnP₄, a polyphosphide with Mn–Mn pairs

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Beiträge zur systematischen Verwandtschaftslehre. Tensionsanalyse der höheren Manganphosphide

Cited by 22 publications

References 9 publications

Atmospheric Pressure Chemical Vapor Deposition: An Alternative Route to Large‐Scale MoS2 and WS2 Inorganic Fullerene‐like Nanostructures and Nanoflowers

Atmospheric Pressure Chemical Vapor Deposition: An Alternative Route to Large‐Scale MoS2 and WS2 Inorganic Fullerene‐like Nanostructures and Nanoflowers

Partial order in the non-stoichiometric phase Ti2+xS4(0.2<x<1)

High-pressure MnP4, a polyphosphide with Mn–Mn pairs

Contact Info

Product

Resources

About

Atmospheric Pressure Chemical Vapor Deposition: An Alternative Route to Large‐Scale MoS₂ and WS₂ Inorganic Fullerene‐like Nanostructures and Nanoflowers

Atmospheric Pressure Chemical Vapor Deposition: An Alternative Route to Large‐Scale MoS₂ and WS₂ Inorganic Fullerene‐like Nanostructures and Nanoflowers

Partial order in the non-stoichiometric phase Ti_2+xS₄(0.2<x<1)

High-pressure MnP₄, a polyphosphide with Mn–Mn pairs