Below-one-volt organic thin-film transistors with large on/off current ratios

Zschieschang, Ute; Bader, Vera P.; Klauk, Hagen

doi:10.1016/j.orgel.2017.06.045

Cited by 48 publications

(63 citation statements)

References 61 publications

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“…Figure c and Figure S5a in the Supporting Information reveal the quasi‐static drain current ( I D ) versus gate voltage ( V G ) characteristics at two different drain voltage values ( V D = 1 and 0.1 V, respectively) for a ZnO EGT with W / L = 200 μm/10 μm. The expected n‐channel behavior is evident, and on/off current ratios of >10 5 were achieved with positive threshold voltages, V th ∼ 0.5 V.…”

Section: Resultsmentioning

confidence: 86%

Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Bidoky

Tang

et al. 2019

Adv Funct Materials

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A facile, high-resolution patterning process is introduced for fabrication of electrolyte-gated transistors (EGTs) and circuits using a photo-crosslinkable ion gel and stencil-based screen printing. The photo-crosslinkable gel is based on a triblock copolymer incorporating UV-sensitive terminal azide functionality and a common ionic liquid. Using this material in conjunction with conventional photolithography and stenciling techniques, well-defined 0.5-1 µm thick ion gel films are patterned on semiconductor channels as narrow as 10 µm. The resulting n-type ZnO EGTs display high electron mobility (>2 cm 2 Vs −1 ) and on/off current ratios (>10 5 ). Further, EGT-based inverters exhibit static gains >23 at supply voltages below 3 V, and five-stage EGT ring oscillator circuits display dynamic propagation delays of 50 µs per stage. In general, the screen printing and photo-crosslinking strategy provides a clean room-compatible method to fabricate EGT circuits with improved sensitivity (gain) and computational power (gain × oscillating frequency). Detailed device analysis indicates that significantly shorter delay times, of order 1 µs, can be obtained by improving the ion gel conductance.

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Section: Resultsmentioning

confidence: 86%

Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Bidoky

Tang

et al. 2019

Adv Funct Materials

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“…One aspect for future work will be the further reduction of the operating voltage of the transistors, because operating voltages greater than about 10 V are unrealistic for most applications. There are more than a hundred publications in which operating voltages of 1 V or less have been reported for organic transistors fabricated on glass, silicon or plastic substrates, 49 while for organic transistors on paper, only one such report exists. 17 This may reflect the difficulty of minimizing the gate-dielectric thickness without introducing prohibitively large gate leakage on substrates with significant surface roughness, but this must be considered a solvable problem.…”

Section: Discussionmentioning

confidence: 99%

Organic transistors on paper: a brief review

Zschieschang

Klauk

2019

J. Mater. Chem. C

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Organic transistors on paper: a brief reviewOrganic transistors for flexible electronics applications are usually fabricated on polymeric substrates, but considering the negative impact of plastic waste on the global environment and taking into account the desirable properties of paper, there are more and more efforts to use paper as a substrate for organic transistors.Organic transistors are being developed for a variety of flexible electronics applications. They are usually fabricated on polymeric substrates, but considering the significant negative impact of plastic waste on the global environment and taking into account the many desirable properties of paper, there have also been efforts to use paper as a substrate for organic transistors. In this review we provide a brief overview of these efforts.

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“…Alternatively, applying high permittivity (highk) dielectrics has proven to be an effective way to increase the unit-area capacitance. [68][69][70]101] Complicated organic integrated circuits and various flexible devices have been successfully demonstrated based on this dielectric including a 11-stage ring oscillator working at 1 MHz (Figure 3b,c). In 2007, Klauk et al first demonstrated the ultralow-voltage organic CMOS inverter based on an oxygen plasma-grown AlO x /self-assembly monolayer (SAM) hybrid dielectric.…”

Section: High-k Dielectric Ofetsmentioning

confidence: 99%

“…Similarly, other than metal oxide, a solution-processed hybrid dielectric containing a high-k poly(vinylidene fluoridetrifluoroethylene-chlorofloroethylene) (P(VDF-TrFE-CFE)) copolymer at the bottom and low-k poly(vinyl cinnamate) (PVC) on the top improves the surface quality. [70,[118][119][120] Even with an unconventional paper substrate, which had an approximately micrometer-scale surface roughness, the OFETs still showed a steep SS of 90 mV dec −1 . As shown in Figure 7d, the steep subthreshold slope allows the transistor turn on within only 0.8 V gate bias.…”

Section: Wwwadvancedsciencenewscommentioning

confidence: 99%

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Ren

Yang

Gao

et al. 2018

Advanced Energy Materials

112

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The operating frequency of ring oscillators or radio-frequency identification tags made by OFETs have surpassed MHz. [27,28] With the growing level of integration and the operating frequency of OFETs, the power dissipation issue can no longer be ignored. Considering the material composition of most organic semiconductors, controlling the temperature rise within a reasonable range is important to avoid the unwanted degradation of organic materials and therefore maintain stable device operation. In addition, OFETs fabricated on flexi ble substrates somehow limit the use of conventional batteries. To avoid externally wiring the batteries, flexible OFET-based circuits can be expected to be self-powered by integrating them with organic solar cells, thermoelectric modules, or triboelectric nanogenerators. [29,30] All of these demands require OFETs operating with extremely low power consumption. Rapid progress has been made in this field, and research efforts have focused on reducing the operating voltage of OFETs, [31][32][33] enhancing the switching efficiency of transistors, [34][35][36][37] and demonstrating several novel device concepts for low-power applications. [38][39][40][41][42] Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices dueThe organic field-effect transistor (OFET) is the basic building block of integrated circuits. The charge carrier mobility and operating frequency of OFETs have continued to increase; therefore, the power dissipation of OFETs can no longer be ignored. Many research efforts have been made to develop low-power-consumption OFETs and complementary circuits. Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices. Organic phototransistors show considerably higher photo responsivity than other photodetector architectures due to field-effect charge modulation. The photoinduced gate modulating largely suppresses the dark current while simultaneously providing gain. These characteristics may favor NIR light detection and suggest that the organic phototransistor is a promising candidate for optoelectronic applications in the NIR regime. For organic thermoelectric applications, OFETs can work as a powerful tool for examining the charge and energy transport in the organic semiconductor, thus giving insight into organic thermoelectric studies. In this review, the authors highlight recent advances in OFET-related energy topics, including lowpower-consumption OFETs, NIR photodetectors, and organic thermoelectric devices. The remaining challenges in the field will also be discussed.

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Below-one-volt organic thin-film transistors with large on/off current ratios

Cited by 48 publications

References 61 publications

Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Organic transistors on paper: a brief review

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

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