Bending performance and bias-stress stability of the In-Ga-Zn-O TFTs prepared on flexible PEN substrates with optimum barrier structures

Park, Minji; Yun, Da-Jung; Ryu, Min-Ki; Yang, Jong‐Heon; Pi, Jae‐Eun; Kim, Gi-Hyun; Hwang, Chi‐Sun; Yoon, Sung‐Min

doi:10.1109/am-fpd.2015.7173213

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 2015

DOI: 10.1109/am-fpd.2015.7173213

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Bending performance and bias-stress stability of the In-Ga-Zn-O TFTs prepared on flexible PEN substrates with optimum barrier structures

Minji Park

Da-Jung Yun

Min-Ki Ryu

et al.

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Cited by 2 publications

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Transparent and flexible zinc oxide-based thin-film diodes and thin-film transistors: A review

Natu,

Laad,

Ghule

et al. 2023

Journal of Applied Physics

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Electronics today has evolved significantly, including its application in transparent and flexible devices. Flexible electronics offers new product concepts, including low production cost, low energy consumption, and sustainable and environmentally friendly materials. This concept leads to the development of novel materials that realize today’s requirements. Incorporating optically transparent and flexible thin-film-based devices into the electronic circuitry helps in maintaining high conductivity along with achieving the similar electronic behavior of the conventional electronic gadgets. Thin-film diodes (TFDs) and thin-film transistors (TFTs) are the core materials to be incorporated as building blocks for flexible devices. Among them, oxide-based thin films have been marked to be significant because of their efficient electrical performance, low temperature processing, and device flexibility. The present article reviews the concepts and application of zinc oxide (ZnO) as the semiconducting material for flexible thin-film devices. We also review flexible and transparent TFDs and TFTs that are based prominently on ZnO as the semiconducting material. Furthermore, the present issues have also been addressed.

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Transparent and flexible zinc oxide-based thin-film diodes and thin-film transistors: A review

Natu,

Laad,

Ghule

et al. 2023

Journal of Applied Physics

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Recent review on improving mechanical durability for flexible oxide thin film transistors

Han¹,

Jeong²,

Kim³

et al. 2019

J. Phys. D: Appl. Phys.

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Amorphous oxide semiconductor thin film transistors (AOS TFT) have recently attracted attention as next generation display backplane materials. In this article, the current research trends and status of AOS TFTs for flexible displays are discussed. First, the degradation mechanism of AOS TFTs via bending stress is examined. In this part, we investigate how to define bending strain, i.e. how the bending stress deteriorates the TFT performance. In addition, we examine the recovery process of the mechanically degraded TFT via thermal energy. Then, we introduce various materials and structures to improve the mechanical durability of AOS TFTs. The material approach as well as the structural approach for each layer (substrate, buffer layer, electrode, active and gate insulator) are included in this paper.

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Bending performance and bias-stress stability of the In-Ga-Zn-O TFTs prepared on flexible PEN substrates with optimum barrier structures

Cited by 2 publications

References 13 publications

Transparent and flexible zinc oxide-based thin-film diodes and thin-film transistors: A review

Transparent and flexible zinc oxide-based thin-film diodes and thin-film transistors: A review

Recent review on improving mechanical durability for flexible oxide thin film transistors

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