Bent-beam strain sensors

Gianchandani, Yogesh B.; Najafi, K.

doi:10.1109/84.485216

Cited by 163 publications

(120 citation statements)

References 14 publications

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“…Gianchandani and Najafi [6] proposed a design using double-clamped cantilevers. This is useful when the deposited material has a large stress gradient in the out-of-plane direction.…”

Section: Design Of the Indicator Structuresmentioning

confidence: 99%

Design and measurement of stress indicator structures for the characterization of Epoclad negative photoresist

Wouters

Puers

2009

J. Micromech. Microeng.

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Using new materials for the structural or active layers in MEMS requires the knowledge of the material properties. In this paper, the internal stress and the coefficient of thermal expansion of Epoclad negative photoresist are measured. Despite being a photoresist, the epoxy-based material has very good mechanical properties. It enables the creation of microscale mechanical structures using this material. The internal stress and the coefficient of thermal expansion were measured using on-wafer stress indicator structures. The structures were designed to give a response caused by internal stress measurable using an optical microscope. The coefficient of thermal expansion is measured via the internal stress at different temperatures.

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“…Gianchandani and Najafi [6] proposed a design using double-clamped cantilevers. This is useful when the deposited material has a large stress gradient in the out-of-plane direction.…”

Section: Design Of the Indicator Structuresmentioning

confidence: 99%

Design and measurement of stress indicator structures for the characterization of Epoclad negative photoresist

Wouters

Puers

2009

J. Micromech. Microeng.

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“…Uncertainties in processing, such as edge bias, and uncertainties in material properties, such as the Young's modulus, contribute to uncertainty in measurements, in addition to uncertainties associated with the vernier or image processing. Although analytical equations exist for evaluating stresses for a given displacement [8], a simple approach is to use a curve fit from a finite element analysis. This analysis includes the effects of the center shuttle; however, for test structures on Rev 2 die, the shuttle is small (3 µm wide) so that the effect is insignificant.…”

Section: Residual Stress Test Structuresmentioning

confidence: 99%

The Sandia MEMS passive shock sensor : FY07 maturation activities.

Houston¹,

Mitchell²,

Wittwer³

et al. 2008

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This report describes activities conducted in FY07 to mature the MEMS passive shock sensor. The first chapter of the report provides motivation and background on activities that are described in detail in later chapters. The second chapter discusses concepts that are important for integrating the MEMS passive shock sensor into a system. Following these two introductory chapters, the report details modeling and design efforts, packaging, failure analysis and testing and validation. At the end of FY07, the MEMS passive shock sensor was at TRL 4.

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“…Only a few MEMS force sensors based on FP resonators have previously been published. A pressure sensor [4] and a shear stress sensor [8] were reported. They are respectively based on out-of-plane and in-plane resonators and do not involve distributed Bragg gratings (DBG).…”

mentioning

confidence: 99%

MEMS Tunable Asymmetric Fabry–Perot Cavity for High-Precision Weighing of Macro Samples

Poulin

St-Gelais

Eichenberger

et al. 2013

J. Microelectromech. Syst.

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Abstract-We propose a microelectromechanical systems-based tunable asymmetric Fabry-Perot cavity for the high-precision weighing of macro samples. The device is based on an in-plane design and is structured in a silicon-on-insulator substrate. The cavity length of the optical resonator is tuned under the action of an external force. The force can be determined from the resulting spectral shift of the optical resonance. Measurements can be done under static conditions and are immune to electromagnetic interferences. Various designs have been simulated, fabricated and characterized. We report the experimental performances of four devices that have been tested under loads up to 98 mN (10 g). Sensitivities ranging from 0.51 to 67.69 nm/mN and absolute resolution ranging from 0.15 to 19.61 μN are reported. The maximum relative resolution of the sensor is below 100 ppm.[2012-0258]

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Bent-beam strain sensors

Cited by 163 publications

References 14 publications

Design and measurement of stress indicator structures for the characterization of Epoclad negative photoresist

Design and measurement of stress indicator structures for the characterization of Epoclad negative photoresist

The Sandia MEMS passive shock sensor : FY07 maturation activities.

MEMS Tunable Asymmetric Fabry–Perot Cavity for High-Precision Weighing of Macro Samples

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