Benzocyclobutene dry etch with minimized byproduct redeposition for application in an InP DHBT process

Stoppel, D.; John, W.; Zeimer, U.; Kunkel, Kevin; Schukfeh, M. I.; Krüger, Olaf; Weimann, Nils

doi:10.1016/j.mee.2016.03.024

Cited by 7 publications

(4 citation statements)

References 22 publications

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“…In order to recover the damaged surface, UV/ozone treatment was applied to the surface of gate recess for 30 minutes, which had been pretreated by HF for 10s. To illustrate the surface oxide of gate recess produced by the UV/ozone treatment is necessary to be cleared, two types of treatments were carried out for comparison in our experiment: one is applying UV/ozone treatment without removing surface oxide, the other is applying UV/ozone treatment and then removing the surface oxide through the surface treatment of TMAH for 30s, with considering that the TMAH treatment could do less damage to InP surface because TMAH is less chemically aggressive than HF [21]. For the convenience of illustration, the three types of HF pretreated devices were separately divided into group1, group2 and group3, while the two types of UV/Ozone treated devices were respectively divided into group4 and group5.…”

Section: Methodsmentioning

confidence: 99%

Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH

Tong

Ding

et al. 2020

IEEE J. Electron Devices Soc.

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in this paper, we introduce novel surface treatments of UV/Ozone and TMAH to solve the surface problem of gate recess of InAlAs/InGaAs InP-based HEMTs. The problem of nonstoichiometric surface of InP etch stopper layer was found to be the result of donor-like surface defects brought by HF damage, bringing troubles like kink effect, high gate leakage current and deteriorated noise performance. Through the method of surface treatments, the InAlAs/InGaAs InP-based HEMTs exhibit excellent DC performances, demonstrating a low gate leakage currents of 10^-8 A/um, a peak transconductance of 1100mS/mm, an improved subthreshold swing of 92.5mV/decade at Vds = 1.0V, and a positive threshold voltage shift of Vth = 300 mV. The ft of 260GHz and fmax of 440GHz were hardly influenced by the surface treatments while the noise performances were improved obviously. Two orders of magnitude smaller input noise spectral density shows the method of surface treatment can effectively reduce the surface defects and significantly improve the surface of gate recess of InAlAs/InGaAs InP-based HEMTs.

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Section: Methodsmentioning

confidence: 99%

Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH

Tong

Ding

et al. 2020

IEEE J. Electron Devices Soc.

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“…The TSVs are implemented to suppress unwanted modes in the host substrate. A single finger 0.8 × 6 μm 2 transistor exhibits cut‐off frequencies f t and f max of about 350 GHz, with BV CEO = 4 V …”

Section: Transferred‐substrate Processmentioning

confidence: 99%

Highly linear fundamental up‐converter in InP DHBT technology for W‐band applications

Hossain

Stoppel

Boppel

et al. 2020

Micro & Optical Tech Letters

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A fundamental up-converter with high linearity is presented, realized as full Gilbert cell (GC) mixer using a 800 nm transferred substrate (TS) InP-DHBT technology. The LO input of the Gilbert cell conducts from 75 to 100 GHz and requires 5 dBm of input power. The GC attains a single sideband (SSB) conversion gain of 10 AE 1 dB within the frequency from 82 to 95 GHz with a saturated output power of −1 dBm at 86 GHz and >5 dB conversion gain between 75 and 100 GHz. The up-converter exhibits 25 GHz of IF bandwidth. The DC power consumption is only 51 mW. K E Y W O R D S Local oscillator (LO), indium phosphide double heterojunction bipolar transistor (DHBT), single sideband (SSB), upper side band (USB), lower side band (LSB), transferred-substrate (TS) process, Gilbert cell (GC) mixer

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“…Pockets are etched into the BCB layer using reactive ion etching (RIE) and a sacrificial mask made by photolithography. 44 The etching step is performed using a mixture of oxygen and sulfur hexafluoride (SF 6 ) at a pressure of 150 mbar and with After that, a 50-nm-thin layer of copper is deposited by sputtering and used as seeding layer for the electroplating. The substrate is then covered with photoresist, and photolithography is used to reveal the pockets defined in the preceding etching step.…”

Section: Substrate Fabricationmentioning

confidence: 99%

“…Pockets are etched into the BCB layer using reactive ion etching (RIE) and a sacrificial mask made by photolithography. 44 The etching step is performed using a mixture of oxygen and sulfur hexafluoride (SF 6 ) at a pressure of 150 mbar and with Figure 2: Fabrication procedure for the strain substrate and a simple nanowire device. The flexible substrate is realized using the steps highlighted in yellow.…”

Section: Substrate Fabricationmentioning

confidence: 99%

An open-source platform to study uniaxial stress effects on nanoscale devices

Signorello

Schraff

Zellekens

et al. 2017

Review of Scientific Instruments

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We present an automatic measurement platform that enables the characterization of nanodevices by electrical transport and optical spectroscopy as a function of uniaxial stress. We provide insights into and detailed descriptions of the mechanical device, the substrate design and fabrication, and the instrument control software, which is provided under open-source license. The capability of the platform is demonstrated by characterizing the piezo-resistance of an InAs nanowire device using a combination of electrical transport and Raman spectroscopy. The advantages of this measurement platform are highlighted by comparison with state-of-the-art piezo-resistance measurements in InAs nanowires. We envision that the systematic application of this methodology will provide new insights into the physics of nanoscale devices and novel materials for electronics, and thus contribute to the assessment of the potential of strain as a technology booster for nanoscale electronics.2

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Benzocyclobutene dry etch with minimized byproduct redeposition for application in an InP DHBT process

Cited by 7 publications

References 22 publications

Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH

Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH

Highly linear fundamental up‐converter in InP DHBT technology for W‐band applications

An open-source platform to study uniaxial stress effects on nanoscale devices

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