Beryllium doped InP/InGaAsP heterojunction bipolar transistors

Low electric field hole impact ionization coefficients in GaInAs and GaInAsP

“…The electric field dependence of the electron ionization coefficients in various materials has been previously extracted from the electrical characteristics of n-p-n HBTs. In Ga In As and Ga In As P 1.3 m) based HBTs, an anomalous low field behavior of the electron ionization coefficients was observed [1], [9]- [11], and an inverse temperature dependence was found in Ga In As [1], [11]. Here, we present measurements of the electric field dependence of the hole ionization coefficients in Ga In As and Ga In As P , obtained from the electrical characteristics of p-n-p HBTs.…”

“…3(a) and (b). The electron ionization coefficients, measured using n-p-n HBTs [9], [10] are presented in Fig. 3 as well.…”

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

“…Specifically, by fine tailoring of the cutoff wavelength, InGaAsP single-photon avalanche photodiodes can offer much enhanced detection efficiency at 1064 nm and lower dark count rate compared with InGaAs ones, which is of vital importance for 1.06 µm light imaging detection and ranging. 1 P type InGaAsP alloys play important roles in diverse pn junction devices such as the light absorbers in electron-initiated avalanche photodiodes, 2 the p-side waveguides in laser diodes, 3 the 1.0 eV absorber in tandem solar cells, 4 and the base layer in heterojunction bipolar transistors, 5 for which the carrier relaxation properties of InGaAsP dramatically affects the device performances. Due to the fact that undoped epitaxial InGaAsP appears natively n type, inverting the doping polarity is technically realized in compensated regimes using acceptors of beryllium (Be), magnesium and zinc.…”