Impact ionization in compound semiconductor devices

Zanoni, Enrico; Meneghesso, Gaudenzio

doi:10.1016/b978-012513745-4/50022-6

Cited by 6 publications

(1 citation statement)

References 224 publications

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“…As mentioned above, lots of electrons will be trapped firstly at the trapping centers introduced by the lattice mismatch between the nucleation layer/SRL layer and Si. When the temperature increases, the lattice vibration in bottom layers strengthens and releases some of the trapped electrons to inject further upwards [28]. This could be the reason that the substrate-grounded device exhibits a relative pronounced R on increase at 130 • C, since it has a more substantial upward trapping portion compared to the substrate-floated device.…”

Section: Off-state Stress and Effects Of Substrate Termination On Ronmentioning

confidence: 99%

Effects of substrate termination on R _on increase under stress in 650 V GaN power devices

Wang²,

Huang

et al. 2021

J. Phys. D: Appl. Phys.

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Buffer related electron trapping and hot electron injection are responsible for R on degradation in devices, but the effects of substrate termination are still uncertain. In this work, both positive and negative substrate bias are applied to investigate the different vertical trapping mechanisms in 650 V gallium nitride (GaN) power devices. R on shows an instant and significant increase under vertical bias stress, and the magnitude of downward buffer electron trapping induced R on increase is relatively larger than that induced by upward trapping. Additionally, the substrate floated and grounded GaN devices are also submitted to both off-state and semi-on-state stresses to investigate the effects of substrate termination on hot electron injection induced R on increase. The intensity of the upward electron trapping increases faster with temperature resulting in a higher R on increase than the downward situation. The hot electron effect is only obvious when the substrate is grounded, suggesting that the main injection destination is not in the buffer. The substrate floated device exhibits a lower R on increase after both off-state and semi-on-state stresses at elevated temperatures. Substrate floated packages are suggested to ensure reliable dynamic performance of device, especially for high voltage application design.

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Section: Off-state Stress and Effects Of Substrate Termination On Ronmentioning

confidence: 99%

Effects of substrate termination on R _on increase under stress in 650 V GaN power devices

Wang²,

Huang

et al. 2021

J. Phys. D: Appl. Phys.

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Reliability of GaN-Based Power Devices

Meneghesso

Zanoni

Meneghini

et al. 2018

Integrated Circuits and Systems

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Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

Pierobon¹,

Rampazzo²,

Clonfero³

et al.

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004.

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Impact ionization in compound semiconductor devices

Cited by 6 publications

References 224 publications

Effects of substrate termination on R _on increase under stress in 650 V GaN power devices

Effects of substrate termination on R _on increase under stress in 650 V GaN power devices

Reliability of GaN-Based Power Devices

Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

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Impact ionization in compound semiconductor devices

Cited by 6 publications

References 224 publications

Effects of substrate termination on R on increase under stress in 650 V GaN power devices

Effects of substrate termination on R on increase under stress in 650 V GaN power devices

Reliability of GaN-Based Power Devices

Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

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Product

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Effects of substrate termination on R _on increase under stress in 650 V GaN power devices

Effects of substrate termination on R _on increase under stress in 650 V GaN power devices