Beta-Ga<sub>2</sub>O<sub>3</sub> MOSFET Device Optimization via TCAD

He, Minghao; Zeng, Fanming; Cheng, Wei-Chih; Wang, Qing; Yu, Hong‐Yu; Ang, Kah Wee

doi:10.1109/edtm47692.2020.9117830

Cited by 9 publications

(4 citation statements)

References 15 publications

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“…Numerical calculation methods, such as newton iteration method, gummel iteration method and block iteration method. After setting, print and tonyplot functions can be used to display the electrical characteristics of the device, as well as internal carrier concentration distribution and electric field distribution [13].…”

Section: Simulation Methodsmentioning

confidence: 99%

Electrical characteristics and reliability of gallium oxide devices study via TCAD simulation

Rui

2024

ACE

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As the Ga2O3 MOSFET is difficult to prepare and less studied, the use of computers to simulate the device is a great help in research. This paper introduces how to use Silvaco TCAD to simulate Ga2O3 MOSFET, and explores its role in the study of the electrical characteristics and reliability of Ga2O3 MOSFET. It is found that the field plate, medium and fin shape of the device can affect the breakdown voltage and on-resistance respectively, and the reliability of the self-heating effect and switching loss is studied. These experiments prove that TCAD has strong customizability, can accurately simulate the performance of the component, has a guiding role in the experiment and can improve the experiment efficiency. This facilitates further optimization of the electrical characteristics and reliability of Ga2O3 MOSFETs through modification of the device structure, resulting in lower power consumption, heat generation and better durability of electrical devices equipped with Ga2O3 MOSFETs.

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Section: Simulation Methodsmentioning

confidence: 99%

Electrical characteristics and reliability of gallium oxide devices study via TCAD simulation

Rui

2024

ACE

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“…Gallium oxide (Ga 2 O 3 ) has excellent properties of a large band gap of 4.2-4.9 eV [1][2][3], a high theoretical avalanche breakdown field of 8.0 MV cm −1 [4,5], high thermal stability, and low production cost [6][7][8], becoming the next generation of excellent ultra-wide-band-gap semiconductor material. Due to these advantages, Ga 2 O 3 power metal-oxide-semiconductor field-effect transistors (MOSFETs) have become a strong contender in future power devices in space applications.…”

Section: Introductionmentioning

confidence: 99%

Research of single-event burnout in vertical Ga₂O₃ FinFET by low carrier lifetime control

Bao,

Yu,

Zhao

et al. 2024

Semicond. Sci. Technol.

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This paper presents the 2-D simulations of single-event burnout (SEB) in vertical enhancement-mode gallium oxide (Ga2O3) fin-shaped channels field-effect transistor (FinFET) by low carrier lifetime control (LCLC) method. The correctness of the structure parameters and simulated physical models are verified by the basic electrical characteristics in experiments. The SEB simulations show that the most sensitive region to heavy ion is the narrow channel region. The SEB failure is due to the diffusion of a large number of electron-hole pairs induced by heavy ion into a strong electric field region, resulting in a large transient current density to cause the thermal failure. Afterwards, the influences of the narrow channel region width on basic characteristics and SEB performance are discussed. Then, the SEB hardening mechanism of LCLC is studied that the electric field peak in the top of the structure can be effectively reduced, and the transient current caused by second avalanche is restrained. In addition, the basic characteristics with LCLC are proved to be hardly influenced in Ga2O3 FinFET. Finally, the carrier lifetime value and local control region are studied that the SEB hardening performance can be significantly improved by a large enough control area with a low carrier lifetime.

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“…Here, we present the optimization of device dimensions of T‐gate AlN/ β ‐Ga 2 O 3 HEMT and subsequent analysis of device electrical characteristics, obtained using simulation results. It is worth mentioning that over the years many studies have been developed to investigate transistor performance by using measurements or technology computer‐aided design (TCAD) simulations 21–26 . Although accomplishing a measurement‐based analysis is a mandatory step before using a transistor in real applications, the TCAD simulation represents a costless and very powerful tool that is needed for enabling an efficient and effective optimization of the device performance.…”

Section: Introductionmentioning

confidence: 99%

“…It is worth mentioning that over the years many studies have been developed to investigate transistor performance by using measurements or technology computer-aided design (TCAD) simulations. [21][22][23][24][25][26] Although accomplishing a measurement-based analysis is a mandatory step before using a transistor in real applications, the TCAD simulation represents a costless and very powerful tool that is needed for enabling an efficient and effective optimization of the device performance. This is because a careful analysis of the TCAD simulations allows predicting how the device performance vary by changing the device materials and sizes without requiring time-consuming and costly experiments.…”

mentioning

confidence: 99%

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Singh¹,

Rao

Lenka

et al. 2023

Int J Numerical Modelling

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In this paper, we report DC and RF analysis of a T‐gate AlN/β‐Ga2O3 high electron mobility transistors (HEMTs) by optimizing the gate‐drain distance (LGD) and two T‐gate dimensions given by the—head‐length (LHL) and the foot‐length (LFL). A two‐dimensional (2‐D) physics‐based device simulator attuned with experimental results is used to perform the analysis. The AlN/β‐Ga2O3 HEMT achieves a high two‐dimensional electron gas (2DEG) density of ~3 × 1013 cm−2, which is attributed to large spontaneous as well as piezoelectric polarization components of the 10 nm AlN thick barrier layer. 2DEG density is also numerically validated using widely used polarization model for III nitrides. It is demonstrated that a highly scaled, both lateral and vertical, device with optimized T‐gate dimensions achieves higher blocking voltage (VBR), low on‐resistance (RON), higher cut‐off frequency (fT) and higher maximum oscillation frequency (fMAX), simultaneously. Consequently, AlN/β‐Ga2O3 HEMT achieves a low specific‐on resistance (RON,sp) of 0.1 mΩ cm2 and an off‐state breakdown voltage of 904 V, which corresponds to the record power figure‐of‐merit (PFoM) of ~8172 MW/cm2. Furthermore, fT of 73 GHz and fMAX of 142 GHz are estimated. These results—low power conduction loss along with higher blocking voltage, and superior RF parameters show the potential of the analyzed device T‐gate AlN/β‐Ga2O3 HEMT for high‐power switching and RF applications.

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Beta-Ga₂O₃ MOSFET Device Optimization via TCAD

Cited by 9 publications

References 15 publications

Electrical characteristics and reliability of gallium oxide devices study via TCAD simulation

Electrical characteristics and reliability of gallium oxide devices study via TCAD simulation

Research of single-event burnout in vertical Ga₂O₃ FinFET by low carrier lifetime control

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

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Beta-Ga2O3 MOSFET Device Optimization via TCAD

Cited by 9 publications

References 15 publications

Electrical characteristics and reliability of gallium oxide devices study via TCAD simulation

Electrical characteristics and reliability of gallium oxide devices study via TCAD simulation

Research of single-event burnout in vertical Ga2O3 FinFET by low carrier lifetime control

Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications

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Beta-Ga₂O₃ MOSFET Device Optimization via TCAD

Research of single-event burnout in vertical Ga₂O₃ FinFET by low carrier lifetime control

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications