$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

Green, Andrew Joseph; Chabak, Kelson D.; Baldini, M.; Moser, Neil; Gilbert, Ryan; Fitch, Robert; Wagner, G.; Galazka, Zbigniew; McCandless, Jonathan P.; Crespo, A.; Leedy, Kevin D.; Jessen, Gregg H.

doi:10.1109/led.2017.2694805

Cited by 277 publications

(178 citation statements)

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“…https://doi.org/10.1063/1.5049130 b-Ga 2 O 3 is attracting interest because of its large bandgap of 4.8 eV, high electric breakdown field of 8 MV/cm, and high saturation electron velocity of 2 Â 10 7 cm/s, which make it promising for high-power devices and solar-blind photodetectors. [1][2][3][4][5][6][7][8][9] Advances in growth technology have resulted in good crystalline and electrical quality bulk and epitaxial n-type material prepared by various techniques, while progress in device fabrication and processing has made it possible to demonstrate high-power rectifiers, 10 field effect transistors (FETs) based on b-Ga 2 O 3 thin films [10][11][12] or nanobelts, 13,14 and sensitive solar-blind photodetectors. 15 Theoretical studies have clarified the role of oxygen vacancies as deep donors, gallium vacancies and their complexes with hydrogen as deep compensating acceptors, and Si, Ge, and Sn as shallow donors.…”

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confidence: 99%

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

Polyakov

Smirnov

Shchemerov

et al. 2018

Applied Physics Letters

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Carrier removal rates and electron and hole trap densities in β-Ga2O3 films grown by hydride vapor phase epitaxy (HVPE) and irradiated with 18 MeV α-particles and 20 MeV protons were measured and compared to the results of modeling. The electron removal rates for proton and α-radiation were found to be close to the theoretical production rates of vacancies, whereas the concentrations of major electron and hole traps were much lower, suggesting that the main process responsible for carrier removal is the formation of neutral complexes between vacancies and shallow donors. There is a concurrent decrease in the diffusion length of nonequilibrium charge carriers after irradiation, which correlates with the increase in density of the main electron traps E2* at Ec − (0.75–0.78) eV, E3 at Ec − (0.95–1.05) eV, and E4 at Ec − 1.2 eV. The introduction rates of these traps are similar for the 18 MeV α-particles and 20 MeV protons and are much lower than the carrier removal rates.

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mentioning

confidence: 99%

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

Polyakov

Smirnov

Shchemerov

et al. 2018

Applied Physics Letters

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“…https://doi.org/10.1063/1.5027763 Gallium oxide (Ga 2 O 3 ) is an emerging candidate for the applications of solar blind photodetectors, high power transistors due to its ultra-large band gap of 4.8 eV, high breakdown field, high electron saturation velocity, and high hardness irradiation. [1][2][3][4][5] To further exploit the potential of Ga 2 O 3 material, bandgap engineering of (Al x Ga 1Àx ) 2 O 3 and heterostructure designs are on demand. Bandgap tunability of (Al x Ga 1Àx ) 2 O 3 alloying up to above 6 eV enables to develop vacuum ultraviolet (VUV) super-radiation hard detectors.…”

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confidence: 99%

Identification and modulation of electronic band structures of single-phase β-(AlxGa1−x)2O3 alloys grown by laser molecular beam epitaxy

Chen

et al. 2018

Applied Physics Letters

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“…Last two-years was a turning point for this meteoric emerging technology since researchers have demonstrated, both, 3.8 MV/cm critical field strength (surpassing GaN and SiC bulk theoretical field strengths) and high-performance nano-membrane β-Ga 2 O 3 GOOI-FETs with record drain currents of 600 mA/mm [59]. Together with the recent demonstration of power and RF MOSFETs, this paves the way to transparent optoelectronic high voltage (power) devices [60].…”

Section: Gallium Oxide the Newcomermentioning

confidence: 99%

Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

Pérez‐Tomás

Chikoidze

Jennings

et al. 2018

Oxide-Based Materials and Devices IX

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Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. Here, we review our integration of WBG and ultra WBG semiconductor oxides into different solar cells architectures where they have the role of transparent conductive electrodes and/or barriers bringing unique functionalities into the structure such above bandgap voltages or switchable interfaces. We also give an overview of the state-of-the-art and perspectives for the emerging semiconductor β-Ga 2 O 3 , which is widely forecast to herald the next generation of power electronic converters because of the combination of an UWBG with the capacity to conduct electricity. This opens unprecedented possibilities for the monolithic integration in solar cells of both self-powered logic and power electronics functionalities. Therefore, WBG and UWBG oxides have enormous promise to become key enabling technologies for the zero emissions smart integration of the internet of things.

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$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

Cited by 277 publications

References 20 publications

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

Identification and modulation of electronic band structures of single-phase β-(AlxGa1−x)2O3 alloys grown by laser molecular beam epitaxy

Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

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