In this paper, a GaN-based betavoltaic epitaxial structure was grown by Metal-Organic Chemical Vapor Deposition (MOCVD) and a p-type ohmic contact was studied in different Ni/Au metal thickness ratios, temperature dependent in N2:O2 (1:1) gas atmosphere and different surface treatments for this epitaxial structure. Transfer length method (TLM) measurements were done after each different process condition in order to check specific contact resistivities. A GaN-based betavoltaic batteries were fabricated and scanning electron microscope (SEM) was used as electron source to test these devices. For this purpose, devices connected to a printed circuit board (PCB) were exposed to electron current of 1.5 nA with 17 keV energy in the SEM. For the 1 x 1 mm2 devices, dark current value of 2.8 pA at 0V,pA at 0V, fill factor (FF) of 0.35, maximum power conversion efficiency of 3.92%, and maximum output power of 1 µW were obtained.