Beyond the linearity of current–voltage characteristics in multiwalled carbon nanotubes

Bourlon, B.; Mikó, C.; Forró, Lászlø; Glattli, Christian; Bachtold, Adrian

doi:10.1088/0268-1242/21/11/s05

Cited by 9 publications

(7 citation statements)

References 37 publications

(68 reference statements)

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“…26,27 On the other hand, the sourcedrain current ͑I sd ͒ versus voltage ͑V sd ͒ curve in Fig. 1͑e͒ reveals that the conductance increased when the bias was increased to be above about 0.5 V. Bourlon et al 28 reviewed this behavior and attributed it to an increase in the number of current-carrying shells and/or to electrons subjected to Coulomb interaction that tunnel across the MWNT-electrode interface.…”

Section: Measurement Methods and Resultsmentioning

confidence: 99%

Thermal probing of energy dissipation in current-carrying carbon nanotubes

Shi

Zhou

Kim

et al. 2009

Journal of Applied Physics

106

133

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Pressure dependency of thermal boundary conductance of carbon nanotube/silicon interface: A molecular dynamics study J. Appl. Phys. 112, 053501 (2012) Investigation of thermal properties of mid-infrared AlGaAs/GaAs quantum cascade lasers J. Appl. Phys. 112, 043112 (2012) Opposite ReD-dependencies of nanofluid (Al2O3) thermal conductivities between heating and cooling modes Appl. Phys. Lett. 101, 083111 (2012) Thermal transport in graphene supported on copper J. Appl. Phys. 112, 043502 (2012) Thermal conductivity of self-assembled nano-structured ZnO bulk ceramicsThe temperature distributions in current-carrying carbon nanotubes have been measured with a scanning thermal microscope. The obtained temperature profiles reveal diffusive and dissipative electron transport in multiwalled nanotubes and in single-walled nanotubes when the voltage bias was higher than the 0.1-0.2 eV optical phonon energy. Over 90% of the Joule heat in a multiwalled nanotube was found to be conducted along the nanotube to the two metal contacts. In comparison, about 80% of the Joule heat was transferred directly across the nanotube-substrate interface for single-walled nanotubes. The average temperature rise in the nanotubes is determined to be in the range of 5-42 K per microwatt Joule heat dissipation in the nanotubes.

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Section: Measurement Methods and Resultsmentioning

confidence: 99%

Thermal probing of energy dissipation in current-carrying carbon nanotubes

Shi

Zhou

Kim

et al. 2009

Journal of Applied Physics

106

133

View full text Add to dashboard Cite

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“…As the CNT are 'cut' in the CMP step, the tips of the CNT are opened [13,17] and the inner shells are also contacted with metal during patterning of the top electrode. Note that this is not the case for horizontal CNT where only the outer shell is metallized, although with larger contact area than for vertical CNT [19][20][21].…”

Section: Methodsmentioning

confidence: 95%

Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects

et al. 2011

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Carbon nanotubes (CNT) are known to be materials with potential for manufacturing sub-20 nm high aspect ratio vertical interconnects in future microchips. In order to be successful with respect to contending against established tungsten or copper based interconnects, though, CNT must fulfil their promise of also providing low electrical resistance in integrated structures using scalable integration processes fully compatible with silicon technology. Hence, carefully engineered growth and integration solutions are required before we can fully exploit their potentialities. This work tackles the problem of optimizing a CNT integration process from the electrical perspective. The technique of measuring the CNT resistance as a function of the CNT length is here extended to CNT integrated in vertical contacts. This allows extracting the linear resistivity and the contact resistance of the CNT, two parameters to our knowledge never reported separately for vertical CNT contacts and which are of utmost importance, as they respectively measure the quality of the CNT and that of their metal contacts. The technique proposed allows electrically distinguishing the impact of each processing step individually on the CNT resistivity and the CNT contact resistance. Hence it constitutes a powerful technique for optimizing the process and developing CNT contacts of superior quality. This can be of relevant technological importance not only for interconnects but also for all those applications that rely on the electrical properties of CNT grown with a catalytic chemical vapor deposition method at low temperature.

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“…[6] In this respect, Scanning Tunneling Microscopy (STM) and Scanning Tunneling Spectroscopy (STS) appear to be ideal techniques to deliver such detail because of their extreme spatial resolution coupled with analytical ability. For instance, STM has been successfully used to determine the structural properties (diameters and chiral indices) of single-walled carbon nanotubes (SWNTs) and to compare their electronic structure from STS spectra with theoretical predictions.…”

mentioning

confidence: 99%

“…[21] Moreover, the energy difference between the energetically favored couple of chiral indices and the other cases is smaller than 5 meV/atom. [50] For these reasons, one cannot exclude the other possible candidates from being the inner tube in this double-walled nanotube, such as the tubes described by the indices (15,4), (14,6), or (12,7) for example. To fully confirm the correlation between the STS spectra and the chiral indices of both the inner and the outer tube, one would have to perform HRTEM, atomically resolved STM imaging and STS on the same double-walled carbon nanotube.…”

mentioning

confidence: 99%