2006
DOI: 10.1073/pnas.0605033103
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Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors

Abstract: We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (10 15 cm ؊2 ) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 ؋ 10 6 A͞cm 2 , and high metallic conductivities, 10 4 S͞cm, in the FET channel; at 4.2 K, the current density is sustained at 10 7 A͞cm 2 . Thus, metallic conductivity persists to low temperatures. The carr… Show more

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Cited by 176 publications
(133 citation statements)
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“…This technique is directly applicable to organic field effect transistor devices, makes possible voltage-tuned filling of the localized tail states, and provides opportunity for metal-like properties to emerge. Claims of metallicity have been reported in electrolyte-gated PBTTTtype thin films through their temperature dependence of the resistivity signature 6 and electron spin resonance properties, 7 while a Hall effect indication of delocalized transport has been found in electrolyte-gated P3HT polymer thin film. 8 However, as recalled by Wang et al:…”
Section: 5mentioning
confidence: 99%
“…This technique is directly applicable to organic field effect transistor devices, makes possible voltage-tuned filling of the localized tail states, and provides opportunity for metal-like properties to emerge. Claims of metallicity have been reported in electrolyte-gated PBTTTtype thin films through their temperature dependence of the resistivity signature 6 and electron spin resonance properties, 7 while a Hall effect indication of delocalized transport has been found in electrolyte-gated P3HT polymer thin film. 8 However, as recalled by Wang et al:…”
Section: 5mentioning
confidence: 99%
“…[7][8][9] In electrolyte-gated fieldeffect transistors (FETs) indeed, the polarization mechanism of such dielectrics involves the reorganization of the included ions forming two (Helmholtz) electric double layers, EDLs, on the microsecond time scale at the gate/electrolyte and electrolyte/semiconductor interfaces. Most of the applied gate-source bias drops across these EDLs.…”
Section: Introductionmentioning
confidence: 99%
“…The effects of electrical gating on the MIT have been demonstrated in La 0.8 Ca 0.2 MnO 3 films backgated through the substrate, and in NdNiO 3 (NNO) films gated through ionic liquids. [11][12][13][14][15] The electric fieldinduced variations of MIT temperature T MI resulted in a strong variation of the phase-dependent charge density.[17] These experiments provided a significant fundamental insight into the interplay between the charge carrier density and phase transitions in correlated oxides.Studies of electric field effects have so far focused on three-terminal field-effect transistor (FET) structures incorporating a gate electrode separated from the oxide film by an electrically insulating gate dielectric. However, these studies have been constrained by the difficulty of incorporating complex oxides into the standard threeterminal FET structure with a separate gate electrode.…”
mentioning
confidence: 99%
“…The effects of electrical gating on the MIT have been demonstrated in La 0.8 Ca 0.2 MnO 3 films backgated through the substrate, and in NdNiO 3 (NNO) films gated through ionic liquids. [11][12][13][14][15] The electric fieldinduced variations of MIT temperature T MI resulted in a strong variation of the phase-dependent charge density. [17] These experiments provided a significant fundamental insight into the interplay between the charge carrier density and phase transitions in correlated oxides.…”
mentioning
confidence: 99%