Bi(Pb)SrCaCuO films on NiSi2/Si (100), CeO2/Si (100) and MgO (001) by in situ DC-sputtering

Chin, Tsung‐Shune; Huang, Jiann‐Wen; Perng, L.H.; Huang, T.W.; Yang, Sen; Hsu, Shu‐Han

doi:10.1016/0921-4534(92)90755-2

Cited by 10 publications

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“…2. The dominant peaks at m/e 127, 506 and 690 correspond to C 3 H 2 0 2 C(CH 3 ) 3 +, Ce(thd) 2 and Ce(thd) 3 Mass spectrum and mass chromatograms of Ce(thd) 4 showing the relative intensities of the main peaks as function of temperature (see the heating profile).…”

Section: Resultsmentioning

confidence: 99%

“…Several authors have demonstrated the use of CeO 2 as a buffer layer for the deposition of high temperature superconductor (HTSC) thin films on silicon [1,2], LaAIO 3 [3], MgO [4] and sapphire [5][6][7][8][9][10]. Several authors have demonstrated the use of CeO 2 as a buffer layer for the deposition of high temperature superconductor (HTSC) thin films on silicon [1,2], LaAIO 3 [3], MgO [4] and sapphire [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

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Deposition of Cerium Dioxide Thin Films on Silicon Substrates by Atomic Layer Epitaxy

Mölsä

Niinistö

1993

MRS Proc.

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CeO 2 overlayers up to 360 nm thick were deposited on Si(100) substrates in a flowtype ALE reactor from Ce(thd) 4 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) precursor and ozone. The growth rate was studied as a function of deposition and source temperatures, reactor pressure and pulse durations. The films were characterized for crystallinity, thickness and composition by using XRD, profilometry, XRF, RBS, XPS and SIMS techniques. Films deposited at 375 OC showed a preferential (110) orientation while at 425 1C they were (111) preferentially oriented. Due to the steric hindrance caused by the bulky precursor the growth rate was only 0.4 A/cycle.

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Section: Resultsmentioning

confidence: 99%