Bi‐Tunable Dielectric Constant of Antiferroelectric PZT Ceramics Under DC Electric Field

Abstract

The dielectric properties of (Pb0.85Ba0.11La0.03)(Zr0.76Sn0.20Ti0.04) (PLZST–B11) composite ceramics have been investigated systematically. The characteristic of PLZST–B11 was that it demonstrated antiferroelectricity. The dielectric constant increased, then decreased sharply with increasing DC electric field, and a low loss also was obtained under DC electric fields (≤40 kV/cm). The low loss (tan δ ~0.003) and the highest tunability (~65%) were obtained for the PLZST–B11 ceramics around 50°C, indicating that it is a promising candidate for bi‐tunable materials nearby room temperature. The dielectric properties of PLZST–B11 composites under a DC bias field can be useful for the design of devices and practical applications.

The microstructure, dielectric abnormalities, polar order and microwave dielectric properties of Ag(Nb1−xTax)O3 (x = 0–0.8) ceramics

“…Therefore, the unique dielectric tunability of Ag(Nb x Ta 1−x )O 3 ceramics with x = 0 and 0.2 at 20-80 • C is a mixed response of ferroelectric-like and antiferroelectric-like behaviours [13], and originates from the ferrielectricity, which was proven for AgNbO 3 at room temperature [5,7]. In comparison, antiferroelectricity is indicated for x = 0.5 at 20-80 • C. A transition behaviour is observed for x = 0.35, for which the dielectric tunability indicates ferrielectricity at 20 • C, while antiferroelectricity is observed at 50 and 80 • C. It should be noted that a drop in the dielectric constant is expected for antiferroelectric and ferrielectric materials when the bias electric field reaches the antiferroelectric (or ferrielectric)-ferroelectric transition field [23], while it is absent in the present work due to the difficulty in preparing Ag(Nb x Ta 1−x )O 3 ceramics with an extremely high breakdown electric field.…”

“…The dielectric constant decreases with the bias electric field first, although it increases under a higher bias electric field for x = 0 and 0.2 at 20, 50 and 80 • C. It is well known that the dielectric constant of ferroelectric materials usually decreases rapidly first with increasing bias electric field, while the dependence slows down under a higher electric field [22]. In contrast, for antiferroelectric materials, the dielectric constant increases and the dependence speeds up with the bias electric field when the field is lower than the antiferroelectric-ferroelectric transition field [23]. Therefore, the unique dielectric tunability of Ag(Nb x Ta 1−x )O 3 ceramics with x = 0 and 0.2 at 20-80 • C is a mixed response of ferroelectric-like and antiferroelectric-like behaviours [13], and originates from the ferrielectricity, which was proven for AgNbO 3 at room temperature [5,7].…”

Preparation and Field-Induced Electrical Properties of Perovskite Relaxor Ferroelectrics

“…Dielectic tunable materials have recently received renewal attention due to the potential applications in filters, phase shifters, wireless communications, etc. [1,2]. These applications demand dielectric materials to possess not only the high dielectric tunability, but also the low dielectric loss, high figure-of-merit, and high temperature stability [3,4].…”

High Tunability in (111)‐Oriented Relaxor Pb0.8Ba0.2ZrO3 Thin Film with Antiferroelectric and Ferroelectric Two‐Phase Coexistence

“…Dielectric tunable materials have recently received renewal attention due to the potential applications in filters, phase shifters, wireless communications, etc . These applications demand dielectric materials possessing not only high dielectric tunability but also low dielectric loss, high figure‐of‐merit (FOM), and high‐temperature stability . To accomplish these requirements, most research efforts in this area are focused on investigating titanium‐containing perovskite ferroelectric materials such as (Ba,Sr)TiO 3 , Ba(Zr,Ti)O 3 , (Ba,Sn)TiO 3 ,, and (Pb,Sr)TiO 3 , Pb(Zr,Ti)O 3 , (Pb,Ca)TiO 3 , etc.…”