Bias dependence and defect analysis of Bi on Si(111) 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msqrt><mml:mn>3</mml:mn></mml:msqrt><mml:mo>×</mml:mo><mml:msqrt><mml:mn>3</mml:mn></mml:msqrt><mml:mspace width="4pt" /><mml:mi>β</mml:mi></mml:mrow></mml:math>
-phase

Chi, Longxing; Nogami, J.; Singh, Chandra Veer

doi:10.1103/physrevb.103.075405

Cited by 7 publications

(7 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Here, we recall that, as a function of the growth parameters, the Bi atoms form on Si(111)7 × 7 three different structures: α-phase, β-phase, and honeycomb phase [ 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 ]. What distinguishes the various phases in the Si(111)√3 × √3R30°-Bi interface are the substrate temperature and the Bi coverage.…”

Section: Resultsmentioning

confidence: 99%

“…What distinguishes the various phases in the Si(111)√3 × √3R30°-Bi interface are the substrate temperature and the Bi coverage. The α-phase is obtained at ~340 °C with Bi coverage of 1/3 ML; β-phase appears at 250 °C and corresponds to a Bi coverage of 1 ML; indeed, the honeycomb phase corresponds to 2/3 ML of Bi obtained in the temperature range 25 °C < T < 250 °C [ 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 ].…”

Section: Resultsmentioning

confidence: 99%

“…After the initial studies carried out on Si(111)√3 × √3R30°-Bi interface [ 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 ] to date [ 28 , 45 , 46 ], great effort has been made both from a theoretical and an experimental point of view to understand the atomic arrangement of Bi atoms [ 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 ]. For α-phase Bi (1/3 ML coverage), several models have been proposed: T 4 and H 3 models have a threefold coordination with Si atoms from the first layer up to the second and fourth substrate layers.…”

Section: Resultsmentioning

confidence: 99%

“…A third phase was initially observed for 2/3 Bi coverage [ 43 ], which appears to show a hexagonal structure, but more probably is a combination of α and β phases. All three phases exhibit √3 × √3R30° surface reconstruction [ 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 ].…”

Section: Resultsmentioning

confidence: 99%

“…Figure 11 displays the STM images (40 × 40) nm 2 collected on 0.5 ML of Si deposited at 240 °C in Si(111)√3 × √3-Bi α-phase ( Figure 11 a) and the (15 × 15) nm 2 zoom-in ( Figure 11 b) of the region within the white square of Figure 11 a. The scattered bright Si islands with a lateral average side of ~3 nm, clearly evident in Figure 11 a, sit on top of the dark continuous Bi α-phase regions, covering two underlying Si terraces whose appearance is bias-independent [ 46 ]. Although it is difficult to visualize their atomic configuration, in Figure 11 b it does not escape the eye that they are massively aligned along the two preferential directions

and

of the atomic arrangement of the Bi atoms located below.…”

Section: Resultsmentioning

confidence: 99%

See 4 more Smart Citations

Evidence of sp2-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi

et al. 2022

View full text Add to dashboard Cite

One-monolayer (ML) (thin) and 5-ML (thick) Si films were grown on the α-phase Si(111)√3 × √3R30°-Bi at a low substrate temperature of 200 °C. Si films have been studied in situ by reflection electron energy loss spectroscopy (REELS) and Auger electron spectroscopy, as a function of the electron beam incidence angle α and low-energy electron diffraction (LEED), as well as ex situ by grazing incidence X-ray diffraction (GIXRD). Scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS) were also reported. The REELS spectra, taken at the Si K absorption edge (~1.840 KeV), reveal the presence of two distinct loss structures attributed to transitions 1s→π* and 1s→σ* according to their intensity dependence on α, attesting to the sp2-like hybridization of the silicon valence orbitals in both thin and thick Si films. The synthesis of a silicon allotrope on the α-phase of Si(111)√3 × √3R30°-Bi substrate was demonstrated by LEED patterns and GIXRD that discloses the presence of a Si stack of 3.099 (3) Å and a √3 × √3 unit cell of 6.474 Å, typically seen for multilayer silicene. STM and STS measurements corroborated the findings. These measurements provided a platform for the new √3 × √3R30° Si allotrope on a Si(111)√3 × √3 R30°-Bi template, paving the way for realizing topological insulator heterostructures from different two-dimensional materials, Bi and Si.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

and

of the atomic arrangement of the Bi atoms located below.…”

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

Evidence of sp2-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi

et al. 2022

View full text Add to dashboard Cite

show abstract

Growth of Single Crystalline 2D Materials beyond Graphene on Non‐metallic Substrates

Gao,

Zhi,

Zhou

et al. 2024

Small

View full text Add to dashboard Cite

The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non‐metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor‐based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non‐metallic substrates and the exploration of growth mechanism at atomic scale.

show abstract

Promoting spin-polarized states in Bi/Si(111) interface mediated by Ba intercalation for advanced spintronics applications

Mihalyuk,

Vekovshinin,

Tupchaya

et al. 2024

Scripta Materialia

View full text Add to dashboard Cite

Bias dependence and defect analysis of Bi on Si(111) 3×3β -phase

Cited by 7 publications

References 28 publications

Evidence of sp2-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi

Evidence of sp2-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi

Growth of Single Crystalline 2D Materials beyond Graphene on Non‐metallic Substrates

Promoting spin-polarized states in Bi/Si(111) interface mediated by Ba intercalation for advanced spintronics applications

Contact Info

Product

Resources

About