Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas

Amar, Achraf Ben; Faucher, M.; Grimbert, B.; Cordier, Y.; François, Marc; Tilmant, Pascal; Werquin, M.; Zhang, Victor; Ducatteau, D.; Gaquière, Christophe; Buchaillot, L.; Théron, Didier

doi:10.1143/apex.5.067201

Cited by 11 publications

(10 citation statements)

References 18 publications

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“…For these reasons, it is hard to conclude about any improvement or damaging of the actuation efficiency due to the use of a thinner buffer. However, both measured values are 130 nm/V for sample Ref and 78 nm/V for sample A and are about three to five times lower than predicted by equation ( 2) [20]:…”

Section: Actuationmentioning

confidence: 55%

Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

Leclaire

Frayssinet

Morelle

et al. 2016

J. Micromech. Microeng.

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We present the first results about microelectromechanical (MEMS) resonators fabricated on epitaxial nitride semiconductors with thin buffers engineered for MEMS and NEMS applications. These results assess the use of thin buffers for GaN MEMS fabrication. On a 700 nm thick AlGaN/GaN epilayer, a high tensile stress is observed to increase the resonant frequency. The electromechanical coupling efficiencies of integrated transducers are assessed and compared with previously obtained results on commercially available 2-µm thick epilayers used for power transistor applications. A 28 nm/V actuation efficiency is measured on the 700-nm thick structure which is slightly better than the one measured on the 2-µm buffer. The electrical response of a gate-less detector designed as a piezoresistance was carried out and a gauge factor of 60 was estimated. These results show that material issues can be unlocked to exploit the potentialities of III-nitrides for NEMS applications.

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Section: Actuationmentioning

confidence: 55%

Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

Leclaire

Frayssinet

Morelle

et al. 2016

J. Micromech. Microeng.

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“…This creates a moment which sets the beam in motion depending on its frequency response and mode shape. However, due to the tensile stress, the mode shape functions are modified, and it can be shown that at the resonant frequency the vibration amplitude is proportional to the first derivative of the corresponding mode shape function at the end of the actuation electrode according to the following formula (Ben Amar et al 2012):…”

Section: Vibration Amplitude and Experimental Measurementsmentioning

confidence: 99%

Gallium nitride MEMS resonators: how residual stress impacts design and performances

et al. 2017

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Starting from Gallium Nitride (GaN) epitaxially grown on silicon, pre-stressed micro-resonators with integrated piezoelectric transducers have been designed, fabricated, and characterized. In clamped-clamped beams, it is well known that tensile stress can be used to increase the resonant frequency. Here we calculate the mode shape functions of out-of-plane flexural modes in prestressed beams and we derive a model to predict both the resonant frequency and the piezoelectric actuation factor. We show that a good agreement between theory and experimental results can be obtained and we derive the optimal design for the electromechanical transduction. Finally, our model predicts an increase of the quality factor due to the tensile stress, which is confirmed by experimental measurements under vacuum. This study demonstrates how to take advantage from the material quality and initial stress resulting of the epitaxial process.

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“…Analytic formulation of Euler-Bernoulli's beam theory to model flexural resonators subjected to a uniform axial force N, or axial stress σ x ≡ N/A with A the cross-section area, can be found, for example, in [21][22][23]. Following the standard modal analysis approach [12,18,24] and considering the resonator to be actuated by means of a piezoelectric patch of thickness h much smaller than the beam thickness H, we derived the deflection amplitude at the fundamental flexural mode of circular frequency ω 1 , see the supplementary materials, and we express this in the following form to highlight the individual contributing factors:…”

Section: Dynamic Amplitude Of Stressed Beam Resonators By Piezoelectr...mentioning

confidence: 99%

“…In order to enable co-integration of MEMS with electronics, materials that are both semiconducting and piezoelectric are of particular interest. Among those available which fulfil these requirements is GaN, widely used for building conventional and resonant HEMTs [14][15][16][17][18]. Two research groups in Germany and in France demonstrated the first MEMS resonators of this kind, namely R-HEMTs [14,15] exploiting both properties of epitaxial AlGaN/GaN structures.…”

Section: Introductionmentioning

confidence: 99%

Improved analytical modelling and finite element verification of stressed GaN microbeam resonators by piezoelectric actuation

Zhang¹,

Faucher²,

Théron³

et al. 2017

J. Micromech. Microeng.

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The characteristics of piezoelectric micro-resonators based on vibrating beams essentially depend on two basic physical coefficients, an effective Young’s modulus (Ye) and a piezoelectric coupling factor (e31e). An improved analytic model is proposed with newly derived expressions of Ye and e31e that account for the anisotropic properties of the III-nitride materials and beam width, W. The analytic model applicable to the only axial stress is completed by finite element (FE) simulations that allow any spatial patterns of pre-stress in wafers to be studied. The value of e31e for wider beams is analytically demonstrated to be much higher than the usual e31, and a strong dependence of e31e on W is also confirmed by FE simulations. Resonance frequency (fr) and actuation efficiency (η) are numerically studied for several pre-stress patterns and beam dimensions. The fr is found to be sensitive to the beam width only for resonators under 2D pre-stress while the η to the stress magnitude regardless of stress pattern. Compared with measurements published for some fabricated resonators, both analytic and FE approaches agree well quantitatively for the resonance frequency and qualitatively for the dynamic amplitude. The results of this study can help design optimization, such as appropriate electrode length and suitable beam width, to gain better performance for this type of resonators.

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Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas

Cited by 11 publications

References 18 publications

Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

Gallium nitride MEMS resonators: how residual stress impacts design and performances

Improved analytical modelling and finite element verification of stressed GaN microbeam resonators by piezoelectric actuation

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