Bias effects on the electro-optic response of Ge-on-Si waveguide photodetectors

Alasio, Matteo G. C.; Goano, Michele; Tibaldi, Alberto; Bertazzi, Francesco; Namnabat, Soha; Adams, Donald; Gothoskar, Prakash; Forghieri, F.; Ghione, Giovanni; Vallone, Marco

doi:10.1109/ipc48725.2021.9592968

Cited by 4 publications

(3 citation statements)

References 8 publications

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“…Extensive multiphysics simulations combined with experimental characterization of selected WPD variants can offer a deep understanding of the underlying physical processes, critical to develop guidelines for the design and optimization of integrated optical trasceivers that fulfill the demand of wide bandwidth and high power efficiency. Building upon our previous work [22][23][24][25][26],…”

Section: Introductionmentioning

confidence: 82%

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Towards 200 Gbit/s low-bias-operation vertical Ge-on-Si waveguide photodetectors

Alasio¹,

Vallone²,

Tibaldi³

et al. 2023

Preprint

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We discuss the characterization and numerical simulation of vertical Ge-on-Si waveguide photodetectors (WPDs) of the Cisco platform for data communications in the O-band (1.31 μm), with the goal of optimizing their frequency response while integrating them into low-power systems. The photodetectors under test have an electro-optic bandwidth of more than 40 GHz at a standard bias voltage of -2 V. Bandwidths larger than 10 GHz are observed even at zero bias, suggesting that vertical WPDs can be exploited in optical communication systems with minimal power consumption. In fact, the characterization campaign has allowed the validation of a complex multiphysics model that is providing design guidelines towards bandwidths not only wider than 60 GHz at -2 V, suitable for application in 200 Gbit/s systems, but also wider than 40 GHz at zero bias.

show abstract

Section: Introductionmentioning

confidence: 82%

“…The three-dimensional (3D) multiphysics model adopted in this investigation [25,26,32] consists of two parts: first, the electromagnetic problem is solved with a finite-difference time-domain…”

Section: Multiphysics Modelingmentioning

confidence: 99%

Towards 200 Gbit/s low-bias-operation vertical Ge-on-Si waveguide photodetectors

Alasio¹,

Vallone²,

Tibaldi³

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

“…Plenty of works have been carried out on Ge-on-Si photodetector's design, and a series of progress has already been made in recent years [7][8][9][10][11][12]. However, its properties need further improvement for the application in 5G communication, optical computation, unmanned driving, and optical sensing [13][14][15]. Geon-Si photodetectors are currently available in two main structures: vertical and lateral PIN junctions.…”

Section: Introductionmentioning

confidence: 99%

Configuration of the active region for the Ge-on-Si photodetector based on carrier mobility

Chang

Xie

et al. 2023

Front. Phys.

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The design of vertical and lateral PIN Ge-on-Si photodetectors was motivated by the disparity in electron and hole mobilities. In the case of vertical PIN junction detectors, configuring the slab region as n-type doping leads to a notable increase in the bandwidth of approximately 20 GHz compared to utilizing p-type doping for the slab. For lateral PIN junction detectors, we determined that setting the length of the n-type slab region to be 2.8 times that of the p-type slab region, based on the carrier saturation drift rate ratio, does not compromise the bandwidth. This configuration enhances the bandwidth while minimizing light absorption loss from the electrode. The proposed design in this study enhances the performance of Ge-on-Si photodetectors without adding complexity to the fabrication process. The principles applied in this study serve as instructive references for the conceptualization of other photonic or electronic devices, reinforcing the widespread applicability of these design strategies.

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TCAD-Assisted Progress on the Cisco Platform Toward Low-Bias 200 Gbit/s vertical-pin Ge- on-Si Waveguide Photodetectors

Alasio,

Vallone,

Tibaldi

et al. 2024

J. Lightwave Technol.

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We discuss the characterization and numerical simulation of vertical Ge-on-Si waveguide photodetectors (VPIN WPDs) of the Cisco platform for data communications in the O-band (1.31 µm), with the goal of optimizing their frequency response while integrating them into low-power systems. In a large set of WPDs belonging to 6 different structural variants, at a standard bias voltage of −2 V the best specimens exhibit an intrinsic electro-optic bandwidth of more than 40 GHz, which is reduced to about 10 GHz at zero bias. A comprehensive 3D multiphysics model, validated through the characterization campaign, provides design guidelines towards intrinsic bandwidths not only wider than 60 GHz at −2 V, directly suitable for application in 200 Gbit/s systems, but also wider than 40 GHz at zero bias, not including the possible recourse to extrinsic parameter engineering.

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Bias effects on the electro-optic response of Ge-on-Si waveguide photodetectors

Cited by 4 publications

References 8 publications

Towards 200 Gbit/s low-bias-operation vertical Ge-on-Si waveguide photodetectors

Towards 200 Gbit/s low-bias-operation vertical Ge-on-Si waveguide photodetectors

Configuration of the active region for the Ge-on-Si photodetector based on carrier mobility

TCAD-Assisted Progress on the Cisco Platform Toward Low-Bias 200 Gbit/s vertical-pin Ge- on-Si Waveguide Photodetectors

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