In a combined experimental and numerical investigation, we present the effects of trap-assisted tunneling on the sub-threshold forward bias characteristics of a blue InGaN/GaN single-quantum-well LED test structure grown on a SiC substrate. The different role of donor- and acceptor-like traps has been studied, for the information it can provide on the role played by point defects. Using the energy Et and trap density Nt as the only tunneling-related fitting parameters, the behavior of the measured I(V) curves is well reproduced by our model over a wide current and temperature range. The very good agreement between simulations and experiments suggests that trap-assisted forward tunneling is one of the most relevant contributions to the current flow below the optical turn-on of the diode

This tutorial paper focuses on the physical origin of thermal droop, i.e., the decrease in the luminescence of light-emitting diodes (LEDs) induced by increasing temperature. III-nitride-based LEDs are becoming a pervasive technology, covering several fields from lighting to displays, from automotive to portable electronics, and from horticulture to sensing. In all these environments, high efficiency is a fundamental requirement, for reducing power consumption and system cost. Over the last decade, a great deal of effort has been put in the analysis of the efficiency droop, the decrease in LED internal quantum efficiency (IQE) induced by high current density. On the other hand, an IQE decrease is observed also for increasing temperature, a phenomenon usually referred to as thermal droop. For commercial LEDs, the IQE decrease related to thermal droop can be comparable to that of efficiency droop: for this reason, understanding thermal droop is a fundamental step for making LEDs capable of operating at high temperature levels. In several fields (including street lighting, automotive, photochemical treatments, projection, entertainment lighting, etc.), compact and high-flux light sources are required: typically, to reduce the size, weight, and cost of the systems, LEDs are mounted in compact arrays, and heat sinks are reduced to a minimum. As a consequence, LEDs can easily reach junction temperatures above 85–100 °C and are rated for junction temperatures up to 150–175 °C (figures from commercially available LED datasheets: Cree XHP70, Osram LUW HWQP, Nichia NVSL219CT, Samsung LH351B, and LedEngin LZP-00CW0R) and this motivates a careful analysis of thermal droop. This paper discusses the possible physical causes of thermal droop. After an introduction on the loss mechanisms in junctions, we will individually focus on the following processes: (i) Shockley–Read–Hall (SRH) recombination and properties of the related defects; (ii) Auger recombination and its temperature dependence, including the discussion of trap-assisted Auger recombination; (iii) impact of carrier transport on the thermal droop, including a discussion on carrier delocalization, escape, and freeze out; (iv) non-SRH defect-related droop mechanisms. In addition, (v) we discuss the processes that contribute to light emission at extremely low current levels and (vi) the thermal droop in deep ultraviolet LEDs, also with reference to the main parasitic emission bands. The results presented within this paper give a tutorial perspective on thermal droop; in addition, they suggest a pathway for the mitigation of this process and for the development of LEDs with stable optical output over a broad temperature range.

We present a combined theoretical, numerical and experimental investigation on trap-assisted tunneling (TAT) in the subthreshold regime of III-nitride-based light-emitting diodes (LEDs). Starting from the basic formulation of the TAT models provided by Hurkx and Schenk, we discuss the derivation of a detailed approach based on both multiphonon and elastic nonlocal processes. A sensitivity study conducted over the main trap- and phonon-related physical parameters of this nonlocal TAT model confirms the importance of tunneling assisted by lattice defects on the LED electrical behavior in the low-medium forward bias range. Comparisons with measured temperature-dependent electrical characteristics I(V;T) of a single quantum well LED grown on a highly conductive SiC substrate demonstrate that I(V;T) can be accurately reproduced in the range between 200 and 400 K by implementing the nonlocal model for TAT processes via traps in the electron-blocking and spacer layers

Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of currentand temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10−30 cm6/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary attempt at uncertainty quantification confirms, beyond the present case, the need for an improved description of carrier transport and microscopic radiative and nonradiative recombination mechanisms in device-level LED numerical models

Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensive investigation and modeling of the impact of defects on the electrical characteristics of InGaN-based LEDs, as a function of the thickness of the quantum well (QW). First, we demonstrate that the density of defects in the active region of III-N LEDs scales with increasing thickness of the InGaN QW. Since device layers with high indium content tend to incorporate more defects, we ascribed this experimental evidence to the increased volume of defects-rich InGaN associated to thicker InGaN layers. Second, we demonstrate that the current-voltage characteristics of the devices are significantly influenced by the presence of defects, especially in the sub turn-on region. Specifically, we show that the electrical characteristics can be effectively modeled in a wide current range (from pA to mA), by considering the existence of trap-assisted tunneling processes. A good correspondence is obtained between the experimental and simulated electrical characteristics (I-V), by using-in the simulation-the actual defect concentrations/activation energies extracted from steady-state photocapacitance, instead of generic fitting parameters.