Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation

Abstract

Accelerated test techniques are needed in order to qualify bipolar devices intended for use in low dose rate environments. Indeed, low dose rate is known to enhance degradation of bipolar devices. Moreover, the bias of microcircuits is known to play a significant role in device degradation. In this work, bipolar microcircuits are irradiated with different bias configurations during the irradiation. It is shown that the bias configuration leading to the worst-case degradation is dose-rate dependent. Moreover, if a time-saving evaluation technique based on dose-rate switching is to be used, the effect of bias has to investigated. Good agreement is found between the predictive curve obtained with the switched dose-rate technique and the low dose rate data.

Atypical Effect of Displacement Damage on LM124 Bipolar Integrated Circuits

“…It is generally assumed that the irradiation with all pin GND is considered as the worst case, but as shown in [7]- [9], this is not always the case. Velo et al [9] have shown the impact of the bias configuration by running test on a COTS LM124 operational amplifier. Those tests highlighted the fact that not all of the parameters of a linear device see their sensitivity increase when GND.…”