Bias enhanced nucleation and bias textured growth of diamond on silicon(100) in hot filament chemical vapor deposition

Huang, Juntong; Yeh, W. Y.; Hwang, Jiann Yang; Chang, Hsu‐Kai

doi:10.1016/s0040-6090(97)00474-4

Cited by 20 publications

(6 citation statements)

References 13 publications

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“…It was easy to find that the length of CNTs was enlarged with the increasing negative bias voltage. It has been reported generally that applying negative bias could enhance the nucleation density of diamond [11][12][13]. This might enhance the growth rate of carbon nanotubes resulting in the elongation of the tube's length.…”

Section: Methodsmentioning

confidence: 99%

Growth and characteristics of carbon nanotubes on carbon cloth as electrodes

Chen

Hsu

et al. 2005

Diamond and Related Materials

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Section: Methodsmentioning

confidence: 99%

Growth and characteristics of carbon nanotubes on carbon cloth as electrodes

Chen

Hsu

et al. 2005

Diamond and Related Materials

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“…Diamond films display an extraordinary combination of properties that enable them to be used in many different applications. [2][3][4][5][6] The task of direct diamond deposition onto grades of cemented WC-Co, consisting of submicron or ultrafine grains of WC and/or high content of Co (i.e., >8 wt.%) becomes an even more difficult endeavor. Because diamond deposition onto cemented WC-Co consisting of fine-sized WC grains and content with a high percentage of Co is difficult, relatively less work has been done on these grades of material.…”

Section: Introductionmentioning

confidence: 99%

“…[7][8][9] However, many articles can be found in the open literature reporting diamond deposition onto coarse-grain WC-Co substrates with Co contents of <8%. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] The major cause of concern that prevents the successful deposition of diamond onto WC-Co is the negative influence of Co on diamond sp 3 carbon (C) formation. [16,17] Generally, the surface pretreatment methods used to remove the Co from the substrate surface and suppress its negative effects on film growth can be classed into three groups: (1) chemical treatments [12] ; (2) stable CO compounds [18] ; and (3) intermediate metallic-ceramic layers.…”

Section: Introductionmentioning

confidence: 99%

Cobalt diffusion in different microstructured WC-Co substrates during diamond chemical vapor deposition

Cabral

Ali

Titus

et al. 2005

J Phs Eqil and Diff

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Our investigation on diamond deposition using cemented tungsten carbide (WC-Co) has shown that diamond particles deposit at different rates onto micrograin and coarse-grain WC-Co substrates. Diamond deposition was carried out using a parallel-plate plasma-enhanced chemical vapor deposition system, which utilized the bias-enhanced growth (BEG) process. BEG was performed at four different times: 15, 20, 25, and 30 min. The resultant diamond-based deposits were characterized for morphology, microstructure, and crystallinity using scanning electron microscopy. It was found that diamond nucleation initiated at the grain boundaries of the substrates. The present article discusses the possible reasons that can potentially explain our key findings. In particular, the CO diffusion from the bulk material through the grain boundaries and onto the substrate surface using a theoretical approach.

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“…The trials [8][9][10][11] in the growth of highly oriented diamond films on Si͑100͒ by the hot filament chemical vapor deposition ͑HFCVD͒ method has been inspired by the success of MPECVD. In 1995, Zhu et al 12 showed that the BEN technique was effective in enhancing diamond nucleation on Si͑100͒ in the low plasma density system such as HFCVD.…”

Section: Introductionmentioning

confidence: 99%

“…The diamond film was oriented, but not continuous as that obtained in MPECVD. Very recently, J. T. Huang et al 9 successfully developed a modified four-step method for HFCVD in growing continuous textured diamond films on n-Si(100). The continuous diamond film is highly textured, but not as highly oriented as that obtained in MPECVD.…”

Section: Introductionmentioning

confidence: 99%

The roles of N and P type Si(100) substrates in the nucleation and growth of textured diamond films by hot filament chemical vapor deposition

Chen

Yeh

Lin

et al. 1999

Journal of Applied Physics

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Comparison study of nucleation and growth characteristics of chemical-vapor-deposited diamond films on CoSi 2 (001) and Si(001) P-Si(100) and n-Si(100) substrates had quite different responses to the same process parameters used in the modified four-step diamond growth method, i.e., pretreatment, heating, bias enhanced nucleation ͑BEN͒ and bias texture growth ͑BTG͒, which has been developed to grow textured diamond films by hot filament chemical vapor deposition. At the pretreatment step, a bright blue plasma discharge induced the formation of damaged voids randomly distributed on the surfaces of p-Si(100) and n-Si(100). The damaged voids on p-Si(100) are several microns in size and 3 m in depth. In contrast, the size and depth of the damaged voids on n-Si(100) are in nanometer scale, approximately two orders of magnitude lower than those on p-Si(100). At the BEN step, carburization occurred along with the possibility of diamond nucleation. Unfacet nuclei of micron scale distributed around the edge of damaged voids all over the p-Si(100) substrate. In contrast, a great number of small nuclei of nanometer scale spread and covered all the damaged voids around the outer edge of the n-Si(100) substrate. The continuous textured diamond film grown on p-Si(100) had better diamond quality than that on n-Si(100) at the BTG step. The textured diamond film on p-Si(100) was flat, however, that on n-Si(100) was under stress in convex shape. Ion bombardment at the BTG step resulted in the enhancement of the growth of textured diamond and in the degradation of diamond quality through the formation of amorphous carbon. P-Si(100) is considered better than n-Si(100) to be the substrate for textured diamond deposition.

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Bias enhanced nucleation and bias textured growth of diamond on silicon(100) in hot filament chemical vapor deposition

Cited by 20 publications

References 13 publications

Growth and characteristics of carbon nanotubes on carbon cloth as electrodes

Growth and characteristics of carbon nanotubes on carbon cloth as electrodes

Cobalt diffusion in different microstructured WC-Co substrates during diamond chemical vapor deposition

The roles of N and P type Si(100) substrates in the nucleation and growth of textured diamond films by hot filament chemical vapor deposition

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